DF005S1−DF10S1

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2

ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted.)

Symbol

Parameter

Value

Unit

DF005S1

DF01S1

DF02S1

DF04S1

DF06S1

DF08S1

DF10S1

VRRM

Maximum Recurrent Peak

Reverse Voltage

50

100

200

400

600

800

1000

V

VRMS

Maximum RMS Bridge Input

Voltage

35

70

140

280

420

560

700

V

VDC

Maximum DC Blocking Voltage

50

100

200

400

600

800

1000

V

IF(AV)

Maximum Average Forward

Current TA = 40_C

1.0

A

IFSM

Peak Forward Surge Current

8.3 ms Single Half−Sine Wave

Superimposed on Rated Load

(JEDEC Method)

35

A

TSTG

Storage Temperature Range

−55 to +150

°C

TJ

Operating Junction

Temperature Range

−55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS (Note 1)

Symbol

Parameter

Conditions

Max.

Unit

RqJA

Thermal Resistance, Junction to Ambient

Single−Die Measurement

(Maximum Land Pattern: 13 × 13 mm)

65

°C/W

Multi−Die Measurement

(Maximum Land Pattern: 13 × 13 mm)

50

Multi−Die Measurement

(Minimum Land Pattern: 1.3 × 1.5 mm)

105

YJL

Thermal Characterization Parameter,

Junction to Lead

Single−Die Measurement

(Maximum and Minimum Land Pattern)

27

°C/W

1. The thermal resistances (RqJA & YJL) are characterized with the device mounted on the following FR4 printed circuit boards, as shown in

Figure 1 and Figure 2. PCB size: 76.2 × 114.3 mm.

Heating effect from adjacent dice is considered and only two dices are powered at the same time.

Figure 1. Maximum Pads of 2 oz Copper

Figure 2. Minimum Pads of 2 oz Copper

F

F

S

S

F

F

S

S

ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VF

Forward Voltage Drop per Bridge Element

IF = 1.0 A

1.1

V

IR

DC Reverse Current

at Rated DC Blocking Voltage

TJ = 25°C

3

mA

TJ = 125°C

500

I2t

Rating for Fusing (t < 8.3 ms)

5.1

A2S

CJ

Junction Capacitance

VR = 4.0 V, f = 1.0 MHz

10

pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.