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DF10S датащи(PDF) 2 Page - ON Semiconductor

номер детали DF10S
подробное описание детали  Bridge Rectifiers
PDF  6 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
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DF10S датащи(HTML) 2 Page - ON Semiconductor

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DF005S − DF10S
www.onsemi.com
2
ABSOLUTE MAXIMUM RATINGS (Note 3) Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
DF005S DF01S
DF02S
DF04S
DF06S
DF08S
DF10S
VRRM
Maximum Repetitive Reverse Voltage
50
100
200
400
600
800
1000
V
VRMS
Maximum RMS Bridge Input Voltage
35
70
140
280
420
560
700
V
VDC
DC Reverse Voltage at Rated IR
50
100
200
400
600
800
1000
V
IF(AV)
Average Rectified Forward Current at TA = 40°C
1.5
A
IFSM
Non−Repetitive Peak Forward Surge Current
8.3 ms Single Half−Sine Wave
50
A
TSTG
Storage Temperature Range
−55 to +150
°C
TJ
Operating Junction Temperature
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
PD
Power Dissipation
3.1
W
RθJA
Thermal Resistance,
Junction−to−Ambient
Single−Die Measurement (Note 1)
(Maximum Land Pattern: 13 x 13 mm)
62
°C/W
Multi−Die Measurement (Note 2)
(Maximum Land Pattern: 13 x 13 mm)
50
Multi−Die Measurement (Note 2)
(Minimum Land Pattern: 1.3 x 1.5 mm)
105
ψJL
Thermal Characterization
Parameter, Junction to Lead
Single−Die Measurement (Note 2)
(Maximum and Minimum Land Pattern)
27
°C/W
1. Device mounted on PCB with 0.5 inch x 0.5 inch (13 mm x 13 mm). Minimum Pads of 2 oz Copper.
2. The thermal resistances (RθJA & ψJL) are characterized with the device mounted on the following FR4 printed circuit boards, as shown in
Figure 1 and Figure 2. PCB size: 76.2 x 114.3 mm. Heating effect from adjacent dice is considered and only tow dices are powered at the
same time.
F
F
S
S
F
F
S
S
Figure 1. Maximum pads of 2 oz copper
Figure 2. Minimun pads of 2 oz copper
ELECTRICAL CHARACTERISTICS
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
VF
Forward Voltage, per Element
IF = 1.5 A
−
−
1.1
V
IR
Reverse Current, per Element at Rated VR
TA = 25°C
−
−
5.0
mA
TA = 125_C
−
−
500
I2t
Rating for Fusing (t < 8.35 ms)
−
−
−
10
A2s
CJ
Typical Capacitance, per Leg
VR = 4.0 V,
f = 1.0 MHz
−
25
−
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.



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