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LTC3822 датащи(PDF) 13 Page - Linear Technology

номер детали LTC3822
подробное описание детали  No RSENSETM, Low Input Voltage, Synchronous Step-Down DC/DC Controller
PDF  20 Pages
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производитель  LINER [Linear Technology]
домашняя страница  http://www.linear.com
Logo LINER - Linear Technology

LTC3822 датащи(HTML) 13 Page - Linear Technology

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LTC3822
3822f
LTC3822
VFB
VOUT
RB
CFF
RA
3822 F03
CIN and COUT Selection
In continuous mode, the source current of the top MOS-
FET is a square wave of duty cycle (VOUT/VIN). To prevent
large voltage transients, a low ESR input capacitor sized
for the maximum RMS current must be used. The maxi-
mum RMS capacitor current is given by:
CINRe
•
•–
/
quiredI
I
VV
V
V
RMS
MAX
OUT
IN
OUT
IN
≈
()12
This formula has a maximum value at VIN = 2VOUT, where
IRMS = IOUT/2. This simple worst-case condition is com-
monly used for design because even significant deviations
do not offer much relief. Note that capacitor manufacturer’s
ripple current ratings are often based on 2000 hours of life.
This makes it advisable to further derate the capacitor or
to choose a capacitor rated at a higher temperature than
required. Several capacitors may be paralleled to meet the
size or height requirements in the design. Due to the high
operating frequency of the LTC3822, ceramic capacitors
can also be used for CIN. Always consult the manufacturer
if there is any question.
The selection of COUT is driven by the effective series
resistance (ESR). Typically, once the ESR requirement is
satisfied, the capacitance is adequate for filtering. The
output ripple (
∆VOUT) is approximated by:
∆≈
+
⎛
⎝⎜
⎞
⎠⎟
V
I
ESR
fC
OUT
RIPPLE
OUT
•
••
1
8
where f is the operating frequency, COUT is the output
capacitance and IRIPPLE is the ripple current in the induc-
tor. The output ripple is highest at maximum input voltage
since IRIPPLE increase with input voltage.
Top-Side MOSFET Drive Supply (CB, DB)
In the Functional Diagram, external bootstrap capacitor CB
is charged from a boost power source (usually VIN)
through diode DB when the SW node is low. When a
MOSFET is to be turned on, the CB voltage is applied
across the gate-source of the desired device. When the
top-side MOSFET is on, the BOOST pin voltage is above the
input supply. VBOOST = 2VIN. CB must be 100 times the
total input capacitance of the top-side MOSFET. The
reverse breakdown of DB must be greater than VIN(MAX).
Figure 6 shows how a 5V gate drive can be achieved if a
secondary 5V supply is available. Note that in applications
where the supply voltage to CB exceeds VIN, the BOOST pin
will draw approximately 500
µA in shutdown mode.
Setting Output Voltage
The LTC3822 output voltage is set by an external feedback
resistor divider carefully placed across the output, as
shown in Figure 3. The regulated output voltage is deter-
mined by:
VV
R
R
OUT
B
A
=+
⎛
⎝⎜
⎞
⎠⎟
06
1
.•
For most applications, a 59k resistor is suggested for RA.
In applications where minimizing the quiescent current is
critical, RA should be made bigger to limit the feedback
divider current. If RB then results in very high impedance,
it may be beneficial to bypass RB with a 50pF to 100pF
capacitor CFF.
APPLICATIO S I FOR ATIO
Figure 3. Setting the Output Voltage



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