| поискавой системы для электроныых деталей |
|
LTC3822 датащи(PDF) 13 Page - Linear Technology |
|
|
|||||||||||||||||||||||||||||
LTC3822 датащи(HTML) 13 Page - Linear Technology |
|
13 / 20 page ![]() 13 LTC3822 3822f LTC3822 VFB VOUT RB CFF RA 3822 F03 CIN and COUT Selection In continuous mode, the source current of the top MOS- FET is a square wave of duty cycle (VOUT/VIN). To prevent large voltage transients, a low ESR input capacitor sized for the maximum RMS current must be used. The maxi- mum RMS capacitor current is given by: CINRe • •– / quiredI I VV V V RMS MAX OUT IN OUT IN ≈ ()12 This formula has a maximum value at VIN = 2VOUT, where IRMS = IOUT/2. This simple worst-case condition is com- monly used for design because even significant deviations do not offer much relief. Note that capacitor manufacturer’s ripple current ratings are often based on 2000 hours of life. This makes it advisable to further derate the capacitor or to choose a capacitor rated at a higher temperature than required. Several capacitors may be paralleled to meet the size or height requirements in the design. Due to the high operating frequency of the LTC3822, ceramic capacitors can also be used for CIN. Always consult the manufacturer if there is any question. The selection of COUT is driven by the effective series resistance (ESR). Typically, once the ESR requirement is satisfied, the capacitance is adequate for filtering. The output ripple ( ∆VOUT) is approximated by: ∆≈ + ⎛ ⎝⎜ ⎞ ⎠⎟ V I ESR fC OUT RIPPLE OUT • •• 1 8 where f is the operating frequency, COUT is the output capacitance and IRIPPLE is the ripple current in the induc- tor. The output ripple is highest at maximum input voltage since IRIPPLE increase with input voltage. Top-Side MOSFET Drive Supply (CB, DB) In the Functional Diagram, external bootstrap capacitor CB is charged from a boost power source (usually VIN) through diode DB when the SW node is low. When a MOSFET is to be turned on, the CB voltage is applied across the gate-source of the desired device. When the top-side MOSFET is on, the BOOST pin voltage is above the input supply. VBOOST = 2VIN. CB must be 100 times the total input capacitance of the top-side MOSFET. The reverse breakdown of DB must be greater than VIN(MAX). Figure 6 shows how a 5V gate drive can be achieved if a secondary 5V supply is available. Note that in applications where the supply voltage to CB exceeds VIN, the BOOST pin will draw approximately 500 µA in shutdown mode. Setting Output Voltage The LTC3822 output voltage is set by an external feedback resistor divider carefully placed across the output, as shown in Figure 3. The regulated output voltage is deter- mined by: VV R R OUT B A =+ ⎛ ⎝⎜ ⎞ ⎠⎟ 06 1 .• For most applications, a 59k resistor is suggested for RA. In applications where minimizing the quiescent current is critical, RA should be made bigger to limit the feedback divider current. If RB then results in very high impedance, it may be beneficial to bypass RB with a 50pF to 100pF capacitor CFF. APPLICATIO S I FOR ATIO Figure 3. Setting the Output Voltage |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |