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SA07 датащи(PDF) 1 Page - Mitsubishi Electric Semiconductor

номер детали SA07
подробное описание детали  THYRISTOR ARRAY SA SERIES FOR STROBE FLASHER
PDF  4 Pages
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производитель  MITSUBISHI [Mitsubishi Electric Semiconductor]
домашняя страница  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

SA07 датащи(HTML) 1 Page - Mitsubishi Electric Semiconductor

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Feb.1999
MITSUBISHI SEMICONDUCTOR
〈HIGH-SPEED SWITCHING THYRISTOR ARRAY〉
SA01, SA02, SA04, SA07
THYRISTOR ARRAY
SA SERIES FOR STROBE FLASHER
SA01, SA02, SA04, SA07
APPLICATION
Automatic strobe flasher
Symbol
VDRM
V1
VDSM V1
VRRM
–
IFGM
Topr
Tstg
Parameter
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Repetitive peak reverse voltage
Pulse current ability
Peak gate forward current
Operating ambient temperature
Storage temperature
Unit
V
V
V
A
A
°C
°C
Main
400
400
See electrical characteristics
–20 ~ +60
–40 ~ +125
SA01
Main
Aux
SA02
SA04
SA07
Aux
480
600
480
600
480
600
450
600
0.5
0.3
0.5
1.0
1.0
0.5
0.3
1.0
MAXIMUM RATINGS (Ta= –20 ~ +60
°C, unless otherwise noted)
1
2
3
4
5
MAIN THYRISTOR: ANODE
MAIN THYRISTOR: GATE
MAIN AND AUX. THYRISTOR: CATHODE
AUX. THYRISTOR: GATE
AUX. THYRISTOR: ANODE
OUTLINE DRAWING
Dimensions
in mm
2
1
15
4
× 3=12
+0.5
0
1
0.5
3
1
0.5
1
4 MAX
34
5
5
24
3
SA SERIES
1
FAMILY CONSTITUTION
Application
Compact strobe
Middle class strobe
Built-in strobe
Commutating characteristics
CM=700
µF, ITM=200A,
CC=2.2
µF
CM=1000
µF, ITM=230A,
CC=2.5
µF
CM=700
µF, ITM=200A,
CC=1.4
µF
Guide No.
(ASA100)
25
32
25
Type
SA01
SA02
SA04
SA07
Aux thyristor
High sensitive IGT
≤=250µA
High holding current IH
≥ 25mA
High holding current IH
≥ 25mA
High sensitive IGT
≤ 250µA
Main
Aux
Main
Aux
V1. Connect 1k
Ω resistor between gate to cathode.


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