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LT1210CS датащи(PDF) 12 Page - Linear Technology |
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LT1210CS датащи(HTML) 12 Page - Linear Technology |
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12 / 16 page ![]() 12 LT1210 1210fa S APPLICATI I FOR ATIO then: TJ = (0.56W)(46°C/W) + 70°C = 96°C for the SO package with 1000 sq. mm topside heat sinking TJ = (0.56W)(27°C/W) + 70°C = 85°C for the R package with 1000 sq. mm topside heat sinking Since the maximum junction temperature is 150 °C, both packages are clearly acceptable. – + LT1210 SD –15V 15V 24k 10k 5V 2N3904 1210 TA04 CMOS Logic to Shutdown Interface Precision ×10 High Current Amplifier – + LT1097 – + LT1210 VIN SD COMP 0.01 µF 3k 330 Ω 9.09k 1k OUT OUTPUT OFFSET: < 500 µV SLEW RATE: 2V/ µs BANDWIDTH: 4MHz STABLE WITH CL < 10nF 1210 TA03 500pF TYPICAL APPLICATIONS T7 Package, 7-Lead TO-220 Thermal Resistance (Junction-to-Case) = 5 °C/W Calculating Junction Temperature The junction temperature can be calculated from the equation: TJ = (PD)(θJA) + TA where: TJ = Junction Temperature TA = Ambient Temperature PD = Device Dissipation θJA = Thermal Resistance (Junction-to-Ambient) As an example, calculate the junction temperature for the circuit in Figure 7 for the SO and R packages assuming a 70 °C ambient temperature. The device dissipation can be found by measuring the supply currents, calculating the total dissipation and then subtracting the dissipation in the load and feedback network. PD = (76mA)(10V) – (1.4V)2/ 10 = 0.56W – + LT1210 SD 5V –5V 680 Ω 220 Ω 10 Ω 0V 2V VO VO = 1.4VRMS 76mA 1210 F07 –2V A Figure 7 |
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