| поискавой системы для электроныых деталей |
|
ZXMS6004FFQ-7 датащи(PDF) 5 Page - Diodes Incorporated |
|
|
|||||||||||||||||||||||||||||
ZXMS6004FFQ-7 датащи(HTML) 5 Page - Diodes Incorporated |
|
5 / 9 page ![]() ZXMS6004FFQ-7 Document number: DS44697 Rev. 1 - 2 5 of 9 www.diodes.com April 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. ZXMS6004FFQ-7 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Static Characteristics Drain-Source Clamp Voltage VDS(AZ) 60 65 70 V ID = 10mA Off-State Drain Current IDSS — — 500 nA VDS = 12V, VIN = 0V — — 1 µA VDS = 36V, VIN = 0V Input Threshold Voltage VIN(TH) 0.7 1 1.5 V VDS = VGS, ID = 1mA Input Current IIN — 60 100 μA VIN = +3V — 120 200 VIN = +5V Input Current while Overtemperature Active — — — 220 μA VIN = +5V Static Drain-Source On-State Resistance RDS(ON) — 400 600 m Ω VIN = +3V, ID = 0.5A — 350 500 VIN = +5V, ID = 0.5A Continuous Drain Current (Note 5) ID 0.9 — — A VIN = 3V; TA = +25°C 1.0 — — VIN = 5V; TA = +25°C Continuous Drain Current (Note 6) 1.2 — — VIN = 3V; TA = +25°C 1.3 — — VIN = 5V; TA = +25°C Current Limit (Note 8) ID(LIM) 0.7 1.7 — A VIN = +3V 1 2.2 — VIN = +5V Dynamic Characteristics Turn-On Delay Time tD(ON) — 5 — μs VDD = 12V, ID = 0.5A, VGS = 5V Rise Time tR — 10 — Turn-Off Delay Time tD(OFF) — 45 — Fall Time tF — 15 — Overtemperature Protection Thermal Overload Trip Temperature (Note 9) TJT +150 +175 — °C — Thermal Hysteresis (Note 9) fF — +10 — °C — Notes: 5. For a device surface mounted on 15mm x 15mm single sided, 1oz weight copper on 1.6mm FR4 board, in still air conditions. 6. For a device surface mounted on 50mm x 50mm single sided, 2oz weight copper on 1.6mm FR4 board, in still air conditions. 7. Thermal resistance from junction and the mounting surfaces of the drain pins. 8. The drain current is restricted only when the device is in saturation (see graph ‘Typical Output Characteristic’). This allows the device to be used in the fully on-state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary. 9. Overtemperature protection is designed to prevent device from destruction under fau lt conditions. Fault conditions are considered as “outside” normal operating range, so this part is not designed to withstand overtemperature for extended periods. |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |