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ZXMS6004FFQ-7 датащи(PDF) 5 Page - Diodes Incorporated

номер детали ZXMS6004FFQ-7
подробное описание детали  60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET
PDF  9 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMS6004FFQ-7 датащи(HTML) 5 Page - Diodes Incorporated

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ZXMS6004FFQ-7
Document number: DS44697 Rev. 1 - 2
5 of 9
www.diodes.com
April 2022
© 2022 Copyright Diodes Incorporated. All Rights Reserved.
ZXMS6004FFQ-7
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Static Characteristics
Drain-Source Clamp Voltage
VDS(AZ)
60
65
70
V
ID = 10mA
Off-State Drain Current
IDSS
—
—
500
nA
VDS = 12V, VIN = 0V
—
—
1
µA
VDS = 36V, VIN = 0V
Input Threshold Voltage
VIN(TH)
0.7
1
1.5
V
VDS = VGS, ID = 1mA
Input Current
IIN
—
60
100
μA
VIN = +3V
—
120
200
VIN = +5V
Input Current while Overtemperature Active
—
—
—
220
μA
VIN = +5V
Static Drain-Source On-State Resistance
RDS(ON)
—
400
600
m
Ω
VIN = +3V, ID = 0.5A
—
350
500
VIN = +5V, ID = 0.5A
Continuous Drain Current (Note 5)
ID
0.9
—
—
A
VIN = 3V; TA = +25°C
1.0
—
—
VIN = 5V; TA = +25°C
Continuous Drain Current (Note 6)
1.2
—
—
VIN = 3V; TA = +25°C
1.3
—
—
VIN = 5V; TA = +25°C
Current Limit (Note 8)
ID(LIM)
0.7
1.7
—
A
VIN = +3V
1
2.2
—
VIN = +5V
Dynamic Characteristics
Turn-On Delay Time
tD(ON)
—
5
—
μs
VDD = 12V, ID = 0.5A, VGS = 5V
Rise Time
tR
—
10
—
Turn-Off Delay Time
tD(OFF)
—
45
—
Fall Time
tF
—
15
—
Overtemperature Protection
Thermal Overload Trip Temperature (Note 9)
TJT
+150
+175
—
°C
—
Thermal Hysteresis (Note 9)
fF
—
+10
—
°C
—
Notes:
5. For a device surface mounted on 15mm x 15mm single sided, 1oz weight copper on 1.6mm FR4 board, in still air conditions.
6. For a device surface mounted on 50mm x 50mm single sided, 2oz weight copper on 1.6mm FR4 board, in still air conditions.
7. Thermal resistance from junction and the mounting surfaces of the drain pins.
8.
The drain current is restricted only when the device is in saturation (see graph ‘Typical Output Characteristic’). This allows the device to be used in the
fully on-state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside
saturation makes current limit unnecessary.
9. Overtemperature protection is designed to prevent device from destruction under fau
lt conditions. Fault conditions are considered as “outside” normal
operating range, so this part is not designed to withstand overtemperature for extended periods.



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