ZXMS6004DGQ

Document number: DS37149 Rev. 5 - 2

2 of 8

www.diodes.com

July 2018

© Diodes Incorporated

ZXMS6004DGQ

Functional Block Diagram

Absolute Maximum Ratings (@TA = +25°C, unless otherwise stated.)

Characteristic

Symbol

Value

Unit

Continuous Drain-Source Voltage

VDS

60

V

Drain-Source Voltage for Short Circuit Protection

VDS(SC)

36

V

Continuous Input Voltage

VIN

-0.5 to +6

V

Continuous Input Current @-

0.2V ≤ VIN ≤ 6V

Continuous Input Current @VIN < -0.2V or VIN > 6V

IIN

No Limit

│IIN │≤2

mA

Pulsed Drain Current @VIN = 3.3V

IDM

2

A

Pulsed Drain Current @VIN = 5V

IDM

2.5

A

Continuous Source Current (Body Diode) (Note 6)

IS

1

A

Pulsed Source Current (Body Diode)

ISM

5

A

Unclamped Single Pulse Inductive Energy,

TJ = +25°C, ID = 0.5A, VDD = 24V

EAS

490

mJ

Electrostatic Discharge (Human Body Model)

VESD

4000

V

Charged Device Model

VCDM

1000

V

Thermal Resistance

Characteristic

Symbol

Value

Unit

Power Dissipation at TA = +25°C (Note 6)

Linear Derating Factor

PD

1.3

10.4

W

mW/°C

Power Dissipation at TA = +25°C (Note 7)

Linear Derating Factor

PD

3.0

24

W

mW/°C

Thermal Resistance, Junction to Ambient (Note 6)

RθJA

96

°C/W

Thermal Resistance, Junction to Ambient (Note 7)

RθJA

42

°C/W

Thermal Resistance, Junction to Case (Note 8)

RθJC

12

°C/W

Operating Temperature Range

TJ

-40 to +150

°C

Storage Temperature Range

TSTG

-55 to +150

°C

Notes:

6. For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR-4 board, in still air conditions.

7. For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR-4 board, in still air conditions.

8. Thermal resistance between junction and the mounting surfaces of drain and source pins.

Over Voltage

Protection

Over

Temperature

Protection

Human

Body ESD

Protection

Logic

dV/dt

Limitation

Over Current

Protection

Logic