TO-252 datasheet(4/19 Pages) AITSEMI

номер детали	TO-252

подробное описание детали	100V, N-CHANNEL SGT MOSFET

PDF	19 Pages

Scroll/Zoom	100%

производитель	AITSEMI [AiT Semiconductor Inc.]

домашняя страница	https://ait-ic.com/

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AiT Semiconductor Inc.

AM12NS10H

www.ait-ic.com

MOSFET

100V, N-CHANNEL SGT MOSFET

REV1.1

- JAN 2023 RELEASED, APR 2024 UPDATED -

- 4 -

Parameter

Symbol

Conditions

Min

Typ.

Max Units

Dynamic Characteristics

Input Capacitance

Ciss

VDS=50V, VGS=0,

f=1MHz

1680

Output Capacitance

Coss

271

Reverse

Transfer Capacitance

Crss

Total Gate Charge

VDD=50V, ID=20A, VGS=10V

(TO-220F, TO-251, TO-252, TO-

220, TO-263-2, PDFN8(5x6))

VDD=50V, ID=10A, VGS=10V

(SOP8)

Gate-Source charge

Qgs

10.2

Gate-Drain charge

Qgd

11.3

Gate resistance

VGS=0, VDS=0

1.3

Switching Characteristics

Turn-On Delay Time

td (ON)

VDD=50V, ID=10A,

VGS=10V,RG = 5Ω

Resistive Load

14.4

Rise Time

Turn-Off Delay Time

td (OFF)

28.8

Fall Time

15.2

Source-Drain Diode Characteristics

Continuous Source Current

TO-220F

34.8

TO-252, TO-251

PDFN8(5x6)

TO-220, TO-263-2

SOP8

Maximum Pulsed Current

ISM

TO-220F

139.2

TO-252, TO-251

PDFN8(5x6)

196

TO-220,

TO-263-2

220

SOP8

Diode Forward Voltage

VSD

VGS=0V,

IS=20A

TO-220F, TO-252

TO-251, TO-220

TO-263-2

PDFN8(5x6)

1.2

VGS=0V,

IS=10A

SOP8

1.2

Reverse Recovery Time

Trr

IS=10A, VGS=0,

di/dt=250A/us

168

Reverse Recovery Charge

Qrr

335.8

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