 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
IRGP4065DPBF датащи(PDF) 2 Page - International Rectifier |
|
|
|||||||||||||||||||||||||||||
IRGP4065DPBF датащи(HTML) 2 Page - International Rectifier |
|
|
2 / 7 page  IRGP4065DPbF 2 www.irf.com Notes: Half sine wave with duty cycle = 0.25, ton=1µsec. Rθ is measured at TJ of approximately 90°C. Pulse width ≤ 400µs; duty cycle ≤ 2%. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVCES Collector-to-Emitter Breakdown Voltage 300 ––– ––– V ∆ΒVCES/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.23 ––– V/°C ––– 1.20 1.40 ––– 1.35 ––– ––– 1.75 2.10 V ––– 2.35 ––– ––– 2.00 ––– VGE(th) Gate Threshold Voltage 2.6 ––– 5.0 V ∆VGE(th)/∆TJ Gate Threshold Voltage Coefficient ––– -11 ––– mV/°C ICES Collector-to-Emitter Leakage Current ––– 2.0 25 µA ––– 50 ––– IGES Gate-to-Emitter Forward Leakage ––– ––– 100 nA Gate-to-Emitter Reverse Leakage ––– ––– -100 gfe Forward Transconductance ––– 26 ––– S Qg Total Gate Charge ––– 62 ––– nC Qgc Gate-to-Collector Charge ––– 20 ––– td(on) Turn-On delay time — 30 — IC = 25A, VCC = 180V tr Rise time — 26 — ns RG = 10Ω, L=200µH, LS= 150nH td(off) Turn-Off delay time — 170 — TJ = 25°C tf Fall time — 160 — td(on) Turn-On delay time — 30 — IC = 25A, VCC = 180V tr Rise time — 28 — ns RG = 10Ω, L=200µH, LS= 150nH td(off) Turn-Off delay time — 250 — TJ = 150°C tf Fall time — 310 — tst Shoot Through Blocking Time 100 ––– ––– ns EPULSE Energy per Pulse µJ Ciss Input Capacitance ––– 2200 ––– Coss Output Capacitance ––– 110 ––– pF Crss Reverse Transfer Capacitance ––– 55 ––– LC Internal Collector Inductance ––– 5.0 ––– Between lead, nH 6mm (0.25in.) LE Internal Emitter Inductance ––– 13 ––– from package Diode Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units IF(AV) Average Forward Current at TC=155°C IFSM Non Repetitive Peak Surge Current ––– ––– 100 A TJ = 155°C, PW = 6.0ms half sine wave VF Forward Voltage ––– 1.0 1.25 V ––– 0.83 1.0 trr Reverse Recovery Time ––– ––– 35 ns ––– 27 ––– TJ = 25°C ––– 40 ––– TJ = 125°C IF = 8A Qrr Reverse Recovery Charge ––– 30 ––– nC TJ = 25°C di/dt = 200A/µs ––– 106 ––– TJ = 125°C VR = 200V Irr Peak Recovery Current ––– 2.2 ––– A TJ = 25°C ––– 5.3 ––– TJ = 125°C Static Collector-to-Emitter Voltage VCE(on) VGE = 15V, ICE = 70A, TJ = 150°C ––– 875 ––– VCE = VGE, ICE = 500µA VCE = 300V, VGE = 0V VCE = 300V, VGE = 0V, TJ = 150°C ––– 975 ––– VCE = 25V, ICE = 25A VCE = 200V, IC = 25A, VGE = 15V e VCC = 240V, VGE = 15V, RG= 5.1Ω VCC = 240V, RG= 5.1Ω, TJ = 25°C L = 220nH, C= 0.40µF, VGE = 15V VCC = 240V, RG= 5.1Ω, TJ = 100°C and center of die contact VGE = 30V VGE = -30V ƒ = 1.0MHz, See Fig.13 VGE = 0V L = 220nH, C= 0.40µF, VGE = 15V Conditions VGE = 0V, ICE = 1 mA Reference to 25°C, ICE = 1mA VGE = 15V, ICE = 120A e VGE = 15V, ICE = 25A e VGE = 15V, ICE = 70A e VGE = 15V, ICE = 40A e IF = 8A IF = 8A, TJ = 125°C IF = 1A, di/dt = -50A/µs, VR =30V VCE = 30V Conditions ––– ––– 8.0 A |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
