Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

SSR04C 60 CT S.5 TX

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TV = TX Level

TXV= TXV Level

S

= S Level

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/39 = Low Profile TO-39

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60 = 600 V

World’s First Silicon Carbide

Centertap Rectifier

SSR04C60CT Series

4A / 600V

Schottky Silicon Carbide

Centertap Rectifier

Features:

• World's First Hermetic SiC Centertap Rectifier

• High Voltage, 600V

• Very High Operating Temperature, 250ºC

• No Recovery Time (tfr or trr)

• High Current Operation, 4A

• Hermetically Sealed Packaging

Maximum Ratings

Symbol

Value

Units

Peak Repetitive and Peak Surge Reverse Voltage

SSR04C50

SSR04C60

500

600

Volts

Average Rectified Forward Current

(Resistive Load, 60 Hz Sine Wave)

Per Leg

Total

Io

2

4

Amps

Non Repetitive Peak Surge Current

4

Amps

Power Dissipation

1.3

5

Watts

Top & Tstg

-55 to +250

ºC

Maximum Thermal Resistance

Junction to Case

Junction to Ambient

Junction to Case

175

45

ºC/W

1

TO-39 (/39)

SMD .5 (S.5)

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RS0022B

DOC