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AFSC5G26F38T2 датащи(PDF) 4 Page - NXP Semiconductors |
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AFSC5G26F38T2 датащи(HTML) 4 Page - NXP Semiconductors |
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4 / 18 page ![]() NXP Semiconductors AFSC5G26F38 Airfast Power Amplifier Module Rev. 3 — 14 June 2024 All information provided in this document is subject to legal disclaimers. Product data sheet 4 / 18 AFSC5G26F38 E 2024 NXP B.V. All rights reserved. 5 Maximum ratings Table 3. Maximum Ratings Rating Symbol Value Unit Gate−Bias Voltage Range VG –0.5 to +10 Vdc Operating Voltage Range VDD 24 to 30 Vdc Storage Temperature Range Tstg –65 to +150 °C Case Operating Temperature TC 125 °C Peak Input Power (2600 MHz, Pulsed CW, 10 μsec(on), 10% Duty Cycle) Pin 25 dBm 6 Lifetime Table 4. Lifetime Characteristic Symbol Value Unit Mean Time to Failure Case Temperature 125°C, 7 W Avg., 32 Vdc MTTF > 10 Years 7 ESD protection characteristics Table 5. ESD Protection Characteristics Test Methodology Class Human Body Model (per JS−001−2017) 1A Charge Device Model (per JS−002−2014) C2a 8 Moisture sensitivity level Table 6. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22−A113, IPC/JEDEC J−STD−020 3 260 °C Document feedback |
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