2 of 6
RF3866
Rev A0 DS070622
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
0 to +7
V
DC
Input RF Level (See Note 1)
+10
dBm
Current Drain, IDD
150 per stage
mA
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Note 1. Max continuous RF IN is +10dBm. The max transient RF IN is
+20dBm.
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
High Band
Frequency
3300
3800
MHz
Current
180
220
mA
VDD=5V
Gain
20
dB
+25°C, VDD=5V, IDD=180mA, 3500MHz
unless specified
Noise Figure
0.8
dB
Output IP3
37
dBm
f1=3500MHz, f2=3501MHz
Output P1dB
22
dBm
S11
-15
dB
S22
-17
dB
S12
-33
dB
Mid Band
Frequency
1800
2700
MHz
Current
180
220
mA
VDD=5V
Gain
28
30
32
dB
+25°C, VDD=5V, IDD=180mA, 2000MHz
unless specified
Noise Figure
0.8
1.0
dB
Output IP3
34
36
dBm
f1=2000MHz, f2=2001MHz
Output P1dB
21.0
22.5
25.0
dBm
S11
-10
dB
S22
-16
dB
S12
-40
dB
Low Band
Frequency
700
1100
MHz
Current
180
220
mA
VDD=5V
Gain
32
dB
+25°C, VDD=5V, IDD=180mA, 850MHz
unless specified
Noise Figure
0.8
dB
OIP3
37
dBm
f1=850MHz, f2=851MHz
OP1dB
22.5
dBm
S11
-10
dB
S22
-12
dB
S12
-48
dB
Caution! ESD sensitive device.
The information in this publication is believed to be accurate and reliable. How-
ever, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use,
nor for any infringement of patents, or other rights of third parties, resulting
from its use. No license is granted by implication or otherwise under any patent
or patent rights of RFMD. RFMD reserves the right to change component cir-
cuitry, recommended application circuitry and specifications at any time without
prior notice.
RoHS status based on EUDirective2002/95/EC (at time of this document revi-
sion).
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