3-113
3
Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Ordering Information
h
V_BIAS
VREF
VCC1
RF IN
RF OUT/VCC2
RF OUT/VCC2
RF OUT/VCC2
RF OUT/VCC2
1
2
3
4
8
7
6
5
PACKAGE BASE
GND
Bias
Circuit
RF3806
GaAs HBT PRE-DRIVER AMPLIFIER
The RF3806 is a GaAs power amplifier, specifically designed for linear
applications. Using a highly reliable GaAs HBT fabrication process, this
high-performance two-stage amplifier achieves high output power over a
broad frequency range. An evaluation board is available to address
UMTS2100 applications.
Features
4W Output Power
High Linearity
1500MHz to 2200MHz Oper-
ation
5V to 8V Supply with Adjust-
able Bias
Applications
GaAs HBT Linear Amplifier
Power Amplifier Stage for
Commercial Wireless Infra-
structure (DCS, PCS, UMTS)
RF3806
GaAs HBT Pre-Driver Amplifier
RF3806PCK-415
Fully Assembled Evaluation Board - UMTS2100
Rev A3 DS070509
RF3806GaAs
HBT Pre-Driver
Amplifier
RoHS Compliant & Pb-Free Product
Package Style: AlN
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