N-CH Electrical Characteristics (TA=25

unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID

Zero Gate Voltage Drain Current

IDSS

VDS=30V,VGS

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

-

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID

VGS=10V, ID

Drain-Source On-State Resistance

RDS(ON)

VGS=4.5V, ID

Forward Transconductance

gFS

VDS=5V,ID=3.1A

-

4

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

-

210

-

PF

Output Capacitance

Coss

-

35

-

PF

Reverse Transfer Capacitance

Crss

VDS=15V,VGS=0V,

F=1.0MHz

-

23

-

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

-

4.5

-

nS

Turn-on Rise Time

tr

-

1.5

-

nS

Turn-Off Delay Time

td(off)

-

18.5

-

nS

Turn-Off Fall Time

tf

VDD=15V, RL

VGS=10V,RGEN

-

15.5

-

nS

Total Gate Charge

Qg

-

5

-

nC

Gate-Source Charge

Qgs

-

0.55

-

nC

Gate-Drain Charge

Qgd

VDS=15V,ID=3.5A,

VGS=10V

-

1

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=3.5A

-

0.8

1.2

V

Diode Forward Current

(Note 2)

IS

-

-

3.5

A

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2.

3.

4. Guaranteed by design, not subject to production

0.7

1.3