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IXFN82N60Q3 датащи(PDF) 2 Page - Inchange Semiconductor Company Limited

номер детали IXFN82N60Q3
подробное описание детали  N-Channel MOSFET Transistor
PDF  8 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IXFN82N60Q3 датащи(HTML) 2 Page - Inchange Semiconductor Company Limited

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ISF1205
eq IXFN82N60Q3
N-Channel MOSFET Transistor
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID =3mA
600
-
-
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID =8mA
3.5
-
6.5
V
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=41A
-
-
75
mΩ
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS=0V
-
-
±200
nA
IDSS
Drain-Source Leakage Current
VDS=600V; VGS= 0V
-
-
50
μ
A
gfs
Forward Transconductance
VDS = 20V, ID = 32A
40
-
S
Ciss
Input Capacitance
VGS = 0V,
VDS = 25V,
f = 1.0MHz
-
1200
-
pF
Coss
Output Capacitance
-
80
-
Crss
Reverse Transfer Capacitance
-
1150
-
Qg
Total Gate Charge
VDD = 300V,
ID = 32A,
VGS = 10V
-
200
-
nC
Qgs
Gate-Source Charge
-
70
-
Qgd
Gate-Drain Charge
-
68
-
td(on)
Turn-on Delay Time
VDD = 300V,
ID = 32A,
RG = 1.0Ω,
VGS = 10V
-
28
-
ns
tr
Turn-on Rise Time
-
25
-
td(off)
Turn-off Delay Time
-
80
-
tf
Turn-off Fall Time
-
25
-
Drain - Source Body Diode Characteristics
ISD
Continuous Source Current
Tc = 25 ºC
-
-
82
A
ISM
Pulsed Source Current
-
-
330
A
VSD
Diode Forward Voltage
ISD= 82A, VGS= 0V
-
-
1.5
V
trr
Reverse Recovery Time
VDD = 100V, IF = 50A,
diF/dt = 100A /μs
-
140
-
ns
Qrr
Reverse Recovery Charge
-
0.6
-
uC



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