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SA7016 датащи(PDF) 6 Page - NXP Semiconductors

номер детали SA7016
подробное описание детали  1.3GHz low voltage fractional-N synthesizer
PDF  18 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

SA7016 датащи(HTML) 6 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
SA7016
1.3GHz low voltage fractional-N synthesizer
1999 Nov 04
6
SYMBOL
UNIT
MAX.
TYP.
MIN.
CONDITIONS
PARAMETER
Phase noise (RSET = 7.5 kΩ, CP=00)
L
Synthesizer’s contribution to close-in phase noise
of 900 MHz RF signal at 1 kHz offset.
GSM
fREF = 13MHz, TCXO,
fCOMP = 1MHz
indicative, not tested
–
–90
–
dBc/Hz
L
(f)
Synthesizer’s contribution to close-in phase noise
of 800 MHz RF signal at 1 kHz offset.
TDMA
fREF = 19.44MHz, TCXO,
fCOMP = 240kHz
indicative, not tested
–
–85
–
dBc/Hz
Interface logic input signal levels; pins 13, 14, 15, 16
VIH
HIGH level input voltage
0.7*VDD
–
VDD+0.3
V
VIL
LOW level input voltage
–0.3
–
0.3*VDD
V
ILEAK
Input leakage current
logic 1 or logic 0
–0.5
–
+0.5
µA
Lock detect output signal (in push/pull mode); pin 1
VOL
LOW level output voltage
Isink=2mA
–
–
0.4
V
VOH
HIGH level output voltage
Isource=–2mA
VDD–0.4
–
–
V
NOTES:
1. ISET =
V
SET
R
SET
bias current for charge pumps.
2. The relative output current variation is defined as:
DI
OUT
I
OUT
+ 2.
(I
2–I1)
I(I
2 ) I1)I
; with V
1 + 0.7V, V2 + VDDCP –0.8V (See Figure 3.)
I2
I1
I2
I1
V1
V2
CURRENT
VPH
SR00602
IZOUT
Figure 3.
Relative Output Current Variation



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