Philips Semiconductors

Product specification

SA621

1GHz low voltage LNA, mixer and VCO

1997 Nov 07

4

AC ELECTRICAL CHARACTERISTICS

SYMBOL

PARAMETER

TEST CONDITIONS

LIMITS

UNITS

SYMBOL

PARAMETER

TEST CONDITIONS

–3

ó

TYP

+3

ó

UNITS

Low Noise Amplifier

RF input frequency range

800

1000

MHz

Amplifier gain

15

dB

Amplifier gain in power-down mode

-28

dB

0.006

dB/

°C

Gain frequency variation

800MHz - 1.0GHz

±0.013

dB/MHz

Amplifier reverse isolation

@ 881 MHz

-28

dB

Amplifier input match

With ext. impedance matching

-10

dB

Amplifier output match

-10

dB

Amplifier input 1dB gain compression

-20

dBm

IP3

Amplifier input third order intercept

-7

dBm

NF

Amplifier noise figure

1.7

dB

Amplifier turn-on time (Enable Lo

→ Hi)

120

µs

Amplifier turn-off time (Enable Hi

→ Lo)

0.3

µs

Mixer

8.7

dB

Mixer input match

Ext. impedance matching req.

-10

dB

Mixer SSB noise figure

12

dB

Mixer input 1dB gain compression

-10

dBm

Mixer input third order intercept

4.5

dBm

Mixer input second order intercept

15

dBm

Mixer RF feedthrough

-41

dBm

LO feedthrough to IF

LO = -10dBm

-23

dBm

LO to mixer input feedthrough

-52

dBm

LO to LNA input feedthrough

-38

dBm

VCO frequency range

883

1083

MHz

VCO power out

See Figure 3

-10

-8

dBm

Offset = 30kHz

-109

dBc/Hz

Offset = 60kHz

-115

dBc/Hz

Harmonic content

-22

dBc

Residual modulation

45

dB

Pulling figure

VSWR=2:1, all phases

±500

kHz

Pushing figure

±100

kHz/V

Overall System

System gain

LNA + Mixer

23.0

23.7

24.4

dB

NOTES:

1. VCO performance dependent on external components.

2. Based on copper-plated 2mm ceramic resonator (1/4 wave), f = 1025MHz, and can be improved by silver-plated or larger resonators.