Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

TO-257

SFX9130J

10 AMP /100 Volts

300 m

Ω

P-Channel MOSFET

Features:

•

Rugged construction with polysilicon gate

•

Low ON-resistance and high

transconductance

•

Excellent high temperature stability

•

Hermetically Sealed, Isolated Package

•

Low Total Gate Charge

•

Fast Switching

•

replacement for IRF9130 types

•

TX, TXV, S-Level screening available

Maximum Ratings

Symbol

Value

Units

Drain - Source Voltage

-100

V

Gate – Source Voltage

±20

V

Max. Continuous Drain Current (package limited)

10

7

A

Max. Avalanche current

@ L= 5.0 mH

9.8

A

Repetitive Avalanche Energy

@ L= 5.0 mH

5.2

mJ

Single Pulse Avalanche Energy

@ L= 5.0 mH

320

mJ

Total Power Dissipation

75

W

Operating & Storage Temperature

-55 to +150

ºC

Maximum Thermal Resistance

(Junction to Case)

1.65

ºC/W

PACKAGE OUTLINE:

TO-257 (J)

PINOUT:

PIN 1: DRAIN

PIN 2: SOURCE

PIN 3: GATE

SUFFIX JDB

SUFFIX JUB

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0013A

DOC