Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Features:

•

Rugged Construction with Poly Silicon Gate

•

Low RDS(on) and High Transconductance

•

Excellent High Temperature Stability

•

Very Fast Switching Speed

•

Fast Recovery and Superior dv/dt Performance

•

Increased Reverse Energy Capability

•

Low Input and Transfer Capacitance for Easy Paralleling

•

Hermetically Sealed

•

TX, TXV, and Space Level Screening Available. Consult

Factory.

•

Replaces RFG60P05E Types

SFF60P05M

SFF60P05Z

-60 AMP/-50 Volts

33 m

Ω

P-Channel

POWER MOSFET

TO-254 (M)

TO-254Z (Z)

Maximum Ratings

Symbol

Value

Units

Drain - Source Voltage

-50

V

Gate – Source Voltage

+20

V

Continuous Drain Current

-60

A

Operating & Storage Temperature

-55 to +150

ºC

Thermal Resistance, Junction to Case

0.8

ºC/W

Total Device Power Dissipation

156

118

Watts

PACKAGE OUTLINE: TO-254 (M)

PIN 1

PIN 3

PIN 2

PACKAGE OUTLINE: TO-254Z (Z)

PIN 1

PIN 2

PIN 3

Available with Glass or Ceramic Seals. Contact Factory for Details.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FP0045D

DOC