NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00265D

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SFL044J

(Unless Otherwise Specified)

Symbol

Min

Typ

Max

Units

Drain to Source Breakdown Voltage

(VGS=0 V, ID=250

μA)

60

––

––

Volts

Drain to Source On State Resistance

(VGS=5 V, ID=18A

)

––

0.026

0.030

Ω

Drain to Source On Resistance

(VGS=4 V, ID= 15A

)

0.034

0.040

Ω

Gate Threshold Voltage

(VDS=VGS, ID= 250

μA)

1.0

1.5

2.0

V

Forward Transconductance

(VDS>10V, IDS=18A

)

22

35

––

S(mho)

Zero Gate Voltage Drain Current

(VDS=max rated voltage, VGS=0 V)

(VDS=80% rated VDS, VGS=0 V, TA=150ºC)

––

––

––

––

25

250

μA

Gate to Source Leakage Forward

Gate to Source Leakage Reverse

At rated VGS

––

––

––

––

+100

-100

nA

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

VGS= 5 Volts

80% rated VDS

ID= 51 A

––

––

––

50

10

38

66

12

43

nC

Turn on Delay Time

Rise Time

Turn on Delay Time

Fall Time

VDD=50% Rated VDS

ID= 51 A

RG= 4.6

Ω

RD= 0.56

Ω

tr

tf

––

––

––

––

17

230

42

110

––

––

––

––

nsec

Diode Forward Voltage

(IS= Rated ID, VGS=0 V, TJ=25ºC)

––

––

2.5

V

Diode Reverse Recovery Time

di/dt=100A/

μsec

––

100

180

nsec

Input Capacitance

Input Capacitance

Reverse Transfer Capacitance

VGS=0 Volts

VDS=25 Volts

f=1 MHz

––

––

––

3300

1200

200

––

––

––

pF

For thermal derating curves and other characteristics please contact SSDI Marketing Department.