Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SFF24N50/3

SFF24N50/3T

(Unless Otherwise Specified)

Symbol

Min

Typ

Max

Units

Drain to Source Breakdown Voltage

(VGS=0 V, ID=250

µA)

500

––

––

Volts

Drain to Source On State Resistance

(VGS=10 V, ID=50% Rated ID

)

––

––

0.2

Ω

On State Drain Current

(VDS>ID(on) X RDS(on) Max, VGS=10V)

24

––

––

A

Gate Threshold Voltage

(VDS=VGS, ID= 4mA

)

2.0

––

4.0

V

Forward Transconductance

(VDS>ID(on) X RDS(on) Max, IDS= 50% Rated ID

)

8

12

––

mho

Zero Gate Voltage Drain Current

(VDS=max rated voltage, VGS=0 V)

(VDS=80% rated VDS, VGS=0 V, TA=125ºC)

––

––

––

––

250

1000

µA

Gate to Source Leakage Forward

Gate to Source Leakage Reverse

At rated VGS

––

––

––

––

+100

-100

nA

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

VGS=10 Volts

50% rated VDS

50% Rated ID

––

––

––

135

28

62

180

40

85

nC

Turn on Delay Time

Rise Time

Turn on Delay Time

Fall Time

VDD=50% Rated VDS

50% Rated ID

RG= 6.2

Ω

VGS=10 Volts

td(on)

tr

td(off)

tf

––

––

––

––

16

33

65

30

30

45

130

40

nsec

Diode Forward Voltage

(IS= Rated ID, VGS=0 V, TJ=25ºC)

––

––

1.5

V

Diode Reverse Recovery Time

Reverse Recovery Charge

IF=10A

Di/dt=100A/

µsec

––

––

––

––

500

––

nsec

nC

Input Capacitance

Input Capacitance

Reverse Transfer Capacitance

VGS=0 Volts

VDS=25 Volts

f=1 MHz

––

––

––

4200

450

135

––

––

––

pF

For thermal derating curves and other characteristics please contact SSDI Marketing Department.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00175E

DOC