Philips Semiconductors

Product specification

SA5212A

Transimpedance amplifier (140MHz)

1998 Oct 07

4

AC ELECTRICAL CHARACTERISTICS

SYMBOL

PARAMETER

TEST CONDITIONS

Min

Typ

Max

UNIT

Transresistance (differential output)

Test Circuit 6, Procedure 1

9.0

14

19

k

Ω

Output resistance (differential output)

DC tested

14

30

46

Ω

Transresistance (single-ended output)

4.5

7

9.5

k

Ω

Output resistance (single-ended output)

DC tested

7

15

23

Ω

Test Circuit 1

D package,

Bandwidth (-3dB)

100

140

MHz

N, FE packages,

100

120

Input resistance

70

110

150

Ω

Input capacitance

10

18

pF

∆R/∆V

Transresistance power supply sensitivity

9.6

%/V

∆R/∆T

Transresistance ambient

temperature sensitivity

D package

0.05

%/

°C

RMS noise current spectral density

(referred to input)

Test Circuit 2

2.5

pA/

√Hz

Integrated RMS noise current over the band-

∆f = 50MHz

20

g

∆f = 100MHz

27

∆f = 200MHz

40

nA

T

∆f = 50MHz

22

∆f = 100MHz

32

∆f = 200MHz

52

PSRR

Any package

DC tested

Equivalent AC

Test Circuit 3

20

33

dB

PSRR

(ECL configuration)

Any package

Test Circuit 4

23

dB

Maximum differential output voltage swing

Test Circuit 6, Procedure 3

1.7

3.2

Maximum input amplitude for output duty

cycle of 50

Test Circuit 5

325

Test Circuit 5

2.0

ns

NOTES:

1. Package parasitic capacitance amounts to about 0.2pF.

3. Guaranteed by linearity and over load tests.

5. As in all high frequency circuits, a supply bypass capacitor should be located as close to the part as possible.