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SA5212AD датащи(PDF) 13 Page - NXP Semiconductors |
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SA5212AD датащи(HTML) 13 Page - NXP Semiconductors |
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13 / 20 page ![]() Philips Semiconductors Product specification SA5212A Transimpedance amplifier (140MHz) 1998 Oct 07 13 Choosing the maximum peak overload current of IavMAX=120µA, the maximum mean optical power is: OUT+ OUT– IN VIN NE5212A R = 560 a. Non-inverting 20dB Amplifier OUT– OUT+ IN NE5212A R = 560 VIN b. Inverting 20dB Amplifier OUT– OUT+ IN NE5212A R = 560 VIN c. Differential 20dB Amplifier SD00344 Figure 13. Variable Gain Circuit P avMAX + hcI avMAX lq + 2.3 @ 10*19(120 @ 10*6) 1.6 @ 10*19 = 172 µW or –7.6dBm Thus the optical dynamic range, DO is: DO = PavMAX - PavMIN = -30.5 -(-7.6) = 22.8dB. This represents the maximum limit attainable with the SA5212A operating at 200MHz bandwidth, with a half mark/half space digital transmission at 820nm wavelength. APPLICATION INFORMATION Package parasitics, particularly ground lead inductances and parasitic capacitances, can significantly degrade the frequency response. Since the SA5212A has differential outputs which can feed back signals to the input by parasitic package or board layout capacitances, both peaking and attenuating type frequency response shaping is possible. Constructing the board layout so that Ground 1 and Ground 2 have very low impedance paths has produced the best results. This was accomplished by adding a ground-plane stripe underneath the device connecting Ground 1, Pins 8–11, and Ground 2, Pins 1 and 2 on opposite ends of the SO14 package. This ground-plane stripe also provides isolation between the output return currents flowing to either VCC2 or Ground 2 and the input photodiode currents to flowing to Ground 1. Without this ground-plane stripe and with large lead inductances on the board, the part may be unstable and oscillate near 800MHz. The easiest way to realize that the part is not functioning normally is to measure the DC voltages at the outputs. If they are not close to their quiescent values of 3.3V (for a 5V supply), then the circuit may be oscillating. Input pin layout necessitates that the photodiode be physically very close to the input and Ground 1. Connecting Pins 3 and 5 to Ground 1 will tend to shield the input but it will also tend to increase the capacitance on the input and slightly reduce the bandwidth. As with any high-frequency device, some precautions must be observed in order to enjoy reliable performance. The first of these is the use of a well-regulated power supply. The supply must be capable of providing varying amounts of current without significantly changing the voltage level. Proper supply bypassing requires that a good quality 0.1 µF high-frequency capacitor be inserted between VCC1 and VCC2, preferably a chip capacitor, as close to the package pins as possible. Also, the parallel combination of 0.1 µF capacitors with 10 µF tantalum capacitors from each supply, VCC1 and VCC2, to the ground plane should provide adequate decoupling. Some applications may require an RF choke in series with the power supply line. Separate analog and digital ground leads must be maintained and printed circuit board ground plane should be employed whenever possible. BASIC CONFIGURATION A trans resistance amplifier is a current-to-voltage converter. The forward transfer function then is defined as voltage out divided by current in, and is stated in ohms. The lower the source resistance, the higher the gain. The SA5212A has a differential transresistance of 14k Ω typically and a single-ended transresistance of 7kΩ typically. The device has two outputs: inverting and non-inverting. The output voltage in the differential output mode is twice that of the output voltage in the single-ended mode. Although the device can be used without coupling capacitors, more care is required to avoid upsetting the internal bias nodes of the device. Figure 13 shows some basic configurations. VARIABLE GAIN Figure 14 shows a variable gain circuit using the SA5212A and the SA5230 low voltage op amp. This op amp is configured in a non-inverting gain of five. The output drives the gate of the SD210 DMOS FET. The series resistance of the FET changes with this output voltage which in turn changes the gain of the SA5212A. This circuit has a distortion of less than 1% and a 25dB range, from -42.2dBm to -15.9dBm at 50MHz, and a 45dB range, from -60dBm to -14.9dBm at 10MHz with 0 to 1V of control voltage at VCC. SD210 OUT+ OUT– 0–5V IN +5V 10k 2.4k 0–1V 51 NE5212A VCC RFOUT RFIN 0.1 µF SD00345 Figure 14. Variable Gain Circuit |
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