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BAV99S датащи(PDF) 2 Page - NXP Semiconductors |
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BAV99S датащи(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page ![]() 2001 May 14 2 Philips Semiconductors Product specification High-speed switching diode array BAV99S FEATURES • Small plastic SMD package • High switching speed • Two electrically isolated series configuration arrays • Low capacitance. APPLICATIONS • General purpose switching in e.g. surface mounted circuits. • Rail to rail (ESD) protection. DESCRIPTION The BAV99S consists of four single die high speed switching diodes in two electrically isolated series configurations, encapsulated in the small SMD SC-88 (SOT363) plastic package. PINNING PIN DESCRIPTION 1 anode (a1) 2 cathode (k2) 3 cathode (k3)/anode (a4) 4 anode (a3) 5 cathode (k4) 6 cathode (k1)/anode (a2) Fig.1 Simplified outline (SC-88; SOT363) and symbol. Marking code: K1. MSA370 12 3 65 4 Top view 65 4 12 3 MBL211 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Solder points at pins: 2, 3, 5 and 6. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VRRM repetitive peak reverse voltage − 85 V VR continuous reverse voltage − 75 V IF continuous forward current − 200 mA IFRM repetitive peak forward current − 450 mA IFSM non-repetitive peak forward current square wave; Tj =25 °C prior to surge; see Fig.4 t=1 µs − 4.5 A t=1ms − 1A t=1s − 0.5 A Ptot total power dissipation Ts ≤ 85 °C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C |
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