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SA3601 датащи(PDF) 2 Page - NXP Semiconductors

номер детали SA3601
подробное описание детали  Low voltage dual-band RF front-end
PDF  14 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

SA3601 датащи(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Preliminary specification
SA3601
Low voltage dual-band RF front-end
2
1999 Nov 09
DESCRIPTION
The SA3601 is an integrated dual-band RF front-end that operates at
both cellular (AMPS and TDMA) and PCS (TDMA) frequencies, and
is designed in a 20 GHz fT BiCMOS process—QUBiC2. The
low-band (LB) receiver is a combined low-noise amplifier (LNA) and
mixer. The LNA has a 1.7 dB noise figure (NF) at 881 MHz with 17 dB
of gain and an IIP3 of –7 dBm. The wide-dynamic range mixer has a
9.5 dB NF at 881 MHz with 9.5 dB of gain and an IIP3 of +6 dBm.
The high-band (HB) receiver is a combined low-noise amplifier (LNA)
and mixer, with the low-band and high-band mixers sharing the same
mixer output. The LNA has a 2.2 dB NF at 1960 MHz with 16 dB of
gain and an IIP3 of –5 dBm. The wide-dynamic range mixer has a
8.5 dB NF at 1960 MHz with 8.5 dB of gain and an IIP3 of +5.5 dBm.
FEATURES
Low current consumption: LB I
CC = 14 mA; HB ICC = 15.5 mA
Outstanding low- and high-band noise figure
LNAs with gain control (30 dB gain step)
LO input and output buffers
Frequency doubler
On chip logic for network selection and power down
Very small outline package
APPLICATIONS
800 to 1000 MHz analog and digital receivers
1800 to 2000 MHz digital receivers
Portable radios
Mobile communications equipment
PIN CONFIGURATION
2
3
4
5
6
7
8
TOP VIEW
1
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
HBLNA_IN
GND
HBMXR+_IN
HBMXR–_IN
PD1
GND
GND
LBMXR_IN
GND
MXR+_OUT
MXR–_OUT
GND
LBVCO_IN
VCC
VCC
VCC
SR02237
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
VERSION
SA3601
BCC32++
HBCC32:
plastic, heatsink bottom chip carrier; 32 terminals; body 5 x 5 x 0.65 mm
SOT560-1



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