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SA3601 датащи(PDF) 2 Page - NXP Semiconductors |
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SA3601 датащи(HTML) 2 Page - NXP Semiconductors |
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2 / 14 page ![]() Philips Semiconductors Preliminary specification SA3601 Low voltage dual-band RF front-end 2 1999 Nov 09 DESCRIPTION The SA3601 is an integrated dual-band RF front-end that operates at both cellular (AMPS and TDMA) and PCS (TDMA) frequencies, and is designed in a 20 GHz fT BiCMOS process—QUBiC2. The low-band (LB) receiver is a combined low-noise amplifier (LNA) and mixer. The LNA has a 1.7 dB noise figure (NF) at 881 MHz with 17 dB of gain and an IIP3 of –7 dBm. The wide-dynamic range mixer has a 9.5 dB NF at 881 MHz with 9.5 dB of gain and an IIP3 of +6 dBm. The high-band (HB) receiver is a combined low-noise amplifier (LNA) and mixer, with the low-band and high-band mixers sharing the same mixer output. The LNA has a 2.2 dB NF at 1960 MHz with 16 dB of gain and an IIP3 of –5 dBm. The wide-dynamic range mixer has a 8.5 dB NF at 1960 MHz with 8.5 dB of gain and an IIP3 of +5.5 dBm. FEATURES • Low current consumption: LB I CC = 14 mA; HB ICC = 15.5 mA • Outstanding low- and high-band noise figure • LNAs with gain control (30 dB gain step) • LO input and output buffers • Frequency doubler • On chip logic for network selection and power down • Very small outline package APPLICATIONS • 800 to 1000 MHz analog and digital receivers • 1800 to 2000 MHz digital receivers • Portable radios • Mobile communications equipment PIN CONFIGURATION 2 3 4 5 6 7 8 TOP VIEW 1 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 HBLNA_IN GND HBMXR+_IN HBMXR–_IN PD1 GND GND LBMXR_IN GND MXR+_OUT MXR–_OUT GND LBVCO_IN VCC VCC VCC SR02237 ORDERING INFORMATION TYPE NUMBER PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION SA3601 BCC32++ HBCC32: plastic, heatsink bottom chip carrier; 32 terminals; body 5 x 5 x 0.65 mm SOT560-1 |
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