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BAS116H датащи(PDF) 3 Page - NXP Semiconductors

номер детали BAS116H
подробное описание детали  75 V, low leakage diode in small SOD123F package
PDF  9 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAS116H датащи(HTML) 3 Page - NXP Semiconductors

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9397 750 14881
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 11 April 2005
3 of 9
Philips Semiconductors
BAS116H
75 V, low leakage diode in small SOD123F package
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Reflow soldering is the only recommended soldering method.
7.
Characteristics
[1]
Pulse test: tp ≤ 300 µs; δ≤ 0.02.
[2]
When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA
Table 6:
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1] [2] -
-
330
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
-
-
70
K/W
Table 7:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
VF
forward voltage
IF = 1 mA
[1] -
-
0.90
mV
IF = 10 mA
[1] -
-
1.00
mV
IF = 50 mA
[1] -
-
1.10
mV
IF = 150 mA
[1] -
-
1.25
mV
IR
reverse current
VR = 75 V
-
0.003 5.0
nA
VR = 75 V; Tj = 150 °C
-
3
80.0
nA
Cd
diode capacitance
VR = 0 V; f = 1 MHz
-
2
-
pF
trr
reverse recovery
time
[2] -
0.8
3.0
µs



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