| поискавой системы для электроныых деталей |
|
BAS116H датащи(PDF) 3 Page - NXP Semiconductors |
|
|
|||||||||||||||||||||||||||||
BAS116H датащи(HTML) 3 Page - NXP Semiconductors |
|
3 / 9 page ![]() 9397 750 14881 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 11 April 2005 3 of 9 Philips Semiconductors BAS116H 75 V, low leakage diode in small SOD123F package 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. [2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA Table 6: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] [2] - - 330 K/W Rth(j-sp) thermal resistance from junction to solder point - - 70 K/W Table 7: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VF forward voltage IF = 1 mA [1] - - 0.90 mV IF = 10 mA [1] - - 1.00 mV IF = 50 mA [1] - - 1.10 mV IF = 150 mA [1] - - 1.25 mV IR reverse current VR = 75 V - 0.003 5.0 nA VR = 75 V; Tj = 150 °C - 3 80.0 nA Cd diode capacitance VR = 0 V; f = 1 MHz - 2 - pF trr reverse recovery time [2] - 0.8 3.0 µs |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |