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IRF7821 датащи(PDF) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

номер детали IRF7821
подробное описание детали  30V N-Channel MOSFET
PDF  9 Pages
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производитель  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
домашняя страница  https://www.evvosemi.com
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IRF7821 датащи(HTML) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

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Static @ TJ= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
30
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
0.025
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
7.0
9.1
m
Ω
9.5
12.5
VGS(th)
Gate Threshold Voltage
1.0
V
∆VGS(th)
Gate Threshold Voltage Coefficient
- 4.9
mV/°C
IDSS
Drain-to-Source Leakage Current
1.0
µA
150
IGSS
Gate-to-Source Forward Leakage
100
nA
Gate-to-Source Reverse Leakage
-100
gfs
Forward Transconductance
22
S
Qg
Total Gate Charge
9.3
14
Qgs1
Pre-Vth Gate-to-Source Charge
2.5
Qgs2
Post-Vth Gate-to-Source Charge
0.8
nC
Qgd
Gate-to-Drain Charge
2.9
Qgodr
Gate Charge Overdrive
3.1
See Fig. 16
Qsw
Switch Charge (Qgs2 + Qgd)
3.7
Qoss
Output Charge
6.1
nC
td(on)
Turn-On Delay Time
6.3
tr
Rise Time
2.7
td(off)
Turn-Off Delay Time
9.7
ns
tf
Fall Time
7.3
Ciss
Input Capacitance
1010
Coss
Output Capacitance
360
pF
Crss
Reverse Transfer Capacitance
110
Avalanche Characteristics
Parameter
Units
EAS
Single Pulse Avalanche Energy
dh
mJ
IAR
Avalanche Current
™
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
3.1
(Body Diode)
A
ISM
Pulsed Source Current
100
(Body Diode)
Ùh
VSD
Diode Forward Voltage
1.0
V
trr
Reverse Recovery Time
28
42
ns
Qrr
Reverse Recovery Charge
23
35
nC
ID = 10A
VGS = 0V
VDS = 15V
VGS = 4.5V, ID = 10A
e
VGS = 4.5V
Typ.
VDS = VGS, ID = 250µA
Clamped Inductive Load
VDS = 15V, ID = 10A
VDS = 24V, VGS = 0V, TJ = 125°C
TJ = 25°C, IF = 10A, VDD = 20V
di/dt = 100A/µs
e
TJ = 25°C, IS = 10A, VGS = 0V e
showing the
integral reverse
p-n junction diode.
MOSFET symbol
VDS = 10V, VGS = 0V
VDD = 15V, VGS = 4.5V e
ID = 10A
VDS = 15V
VGS = 20V
VGS = -20V
VDS = 24V, VGS = 0V
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 13A e
Conditions
Max.
44
10
ƒ = 1.0MHz
IRF7821
30V N-Channel MOSFET
Rev:2023A2
2



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