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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SA1921 датащи(PDF) 9 Page - NXP Semiconductors |
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SA1921 датащи(HTML) 9 Page - NXP Semiconductors |
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9 / 36 page  Philips Semiconductors Product specification SA1921 Satellite and cellular dual-band RF front-end 1999 Mar 02 9 AC ELECTRICAL CHARACTERISTICS High-Band, Single Mode of Operation LNA and Image Reject Mixer VCC = +3.75 V, FreqRF = 1550 MHz, FreqLO = 1713 MHz, PLOin = –3 dBm, TA = +25_C; unless otherwise stated. PARAMETERS MIN –3 s TYP. +3 s MAX UNITS NOTES RF Input Frequency Range 1515 1600 MHz IF Frequency 150 163 185 MHz LO Frequency 1665 1785 MHz Power Gain 21.5 22.2 22.9 dB Power Gain Reduction (Strong Signal Mode—LNA Off) 34 47 60 dB Noise Figure 3.7 3.9 4.1 dB Input Impedance, RF Port 50 W Return Loss at Inputs –10 dB 1 LO leakage at RF Port –48 dBm 1 dB RF Input Compression Point –24 dBm IP3 (3RD Order Intermodulation Product) Referred to the RF Input Port –14 –11.5 –9 dBm (2 x LO) – (2 x RF) Spur Performance –50 dBm IN Referred to RF Input Port –62 dBc 50 dBm IN Referred to RF In ut Port Measure at LO = 1688 MHz and RF = 1606 MHz (3 x LO) – (3 x RF) Spur Performance. –50 dBm IN Referred to RF Input Port. Measure at LO = 1688 MHz and RF = 1634 MHz. –102 dBc Image rejection, fRX+2fIF Referred to the RF Input Port 31.5 34 36.5 dB LO Input Power –5 –3 –1 dBm Turn ON/OFF Time 10 msec High-Band LO Buffer VCC = +3.75 V, FreqLO = 1713 MHz, PLOin = –3 dBm, TA = +25_C; unless otherwise stated. PARAMETERS MIN –3 s TYP. +3 s MAX UNITS NOTES LO Frequency Range 1665 1785 MHz Differential Output Power –9 dBm Differential Output Impedance 100 W Harmonic Content –20 dBc Input Power –5 –3 –1 dBm Input Impedance 50 W 1 Turn On/Off Time 10 msec NOTE: 1. External matching network is required. |
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