BAP70AM datasheet(3/7 Pages) NXP

номер детали	BAP70AM

подробное описание детали	Silicon PIN diode array

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производитель	NXP [NXP Semiconductors]

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BAP70AM_1

Product data sheet

Rev. 01 — 20 November 2006

3 of 7

NXP Semiconductors

BAP70AM

Silicon PIN diode array

Characteristics

Table 6.

Characteristics

Tamb = 25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

forward voltage

IF = 50 mA

0.9

1.1

reverse current

VR = 50 V

<100

diode capacitance

see Figure 1; f = 1 MHz;

VR = 0 V

570

VR = 1 V

400

VR = 5 V

270

VR = 20 V

200

250

diode forward resistance

see Figure 2; f = 100 MHz;

IF = 0.5 mA

100

Ω

IF = 1 mA

Ω

IF = 10 mA

5.4

Ω

IF = 100 mA

1.4

1.9

Ω

τL

charge carrier life time

when switched from IF = 10 mA to

IR = 6 mA; RL = 100 Ω; measured at

IR =3mA

1.25

µs

series inductance

IF = 100 mA; f = 100 MHz

0.6

f = 1 MHz; Tj =25 °C.

f = 100 MHz; Tj =25 °C.

Fig 1.

Diode capacitance as a function of reverse

voltage; typical values

Fig 2.

Diode forward resistance as a function of

forward current; typical values

VR (V)

020

510

001aaa461

400

300

500

600

(fF)

200

103

102

mce007

10−1

110

(

Ω)

IF (mA)

102

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