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CPD1E36V датащи(PDF) 2 Page - Comchip Technology

номер детали CPD1E36V
подробное описание детали  Bidirectional ESD / Transient Suppressor
PDF  2 Pages
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производитель  COMCHIP [Comchip Technology]
домашняя страница  http://www.comchiptech.com
Logo COMCHIP - Comchip Technology

CPD1E36V датащи(HTML) 2 Page - Comchip Technology

  CPD1E36V Datasheet HTML 1Page - Comchip Technology CPD1E36V Datasheet HTML 2Page - Comchip Technology  
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Bidirectional ESD Suppressor
Specifications:
( Ta = 25
oC )
36V Characteristic PRELIMINARY
Symbol
Characteristic
Min
Typ
Max
Units
Test Condition
VBD
Diode breakdown voltage
38
40
V
IF = 1 ma
IL
Leakage current
0.1
2.0
uA
36v
CT
Capacitance
5
pF
@ 1Mhz
VESD
Channel clamp voltage
-
+ 40
V
8kV event
VPV
Peak ESD voltage capability
16
kV
IEC 61000-4-2
Ipp *
Peak Pulse Current
15
A
8 / 20 us
24V Characteristic (CAN bus)
Symbol
Characteristic
Min
Typ
Max
Units
Test Condition
VBD
Diode breakdown voltage
25
28
V
IF = 1 ma
IL
Leakage current
0.1
2.0
uA
24v
CT
Capacitance
10
pF
@ 1Mhz
VESD
Channel clamp voltage
-
+ 25
V
8kV event
VPV
Peak ESD voltage capability
16
kV
IEC 61000-4-2
Ipp *
Peak Pulse Current
15
A
8 / 20 us
12V Characteristic PRELIMINARY
Symbol
Characteristic
Min
Typ
Max
Units
Test Condition
VBD
Diode breakdown voltage
14
17
V
IF = 1 ma
IL
Leakage current
0.1
2.0
uA
12v
CT
Capacitance
12
pF
@ 1Mhz
VESD
Channel clamp voltage
-
+ 17
V
8kV event
VPV
Peak ESD voltage capability
16
kV
IEC 61000-4-2
Ipp *
Peak Pulse Current
15
A
8 / 20 us
5V0 Characteristic
Symbol
Characteristic
Min
Typ
Max
Units
Test Condition
VBD
Diode breakdown voltage
5.1
7.0
V
IF = 1 ma
IL
Leakage current
+0.1
+ 2.0
uA
5v
CT
Capacitance
15
20
pF
@ 1Mhz
VESD
Channel clamp voltage
-
+ 7.0
V
8kV event
VPV
Peak ESD voltage capability
16
kV
IEC 61000-4-2
Ipp *
Peak Pulse Current
5.1
A
8 / 20 us
* one diode conducting
Ordering Information:
CPD
36V
Type
Package Code
Code from
Dimensions Table
Voltage
CPD
5V0
12V
24V
36V
1E / U



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