PXT2907A datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 14

Philips Semiconductors

Product speciﬁcation

PNP switching transistor

PXT2907A

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.

For other mounting conditions, see

“Thermal considerations for SOT89 in the General Part of associated Handbook”.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

K/W

Rth j-s

thermal resistance from junction to soldering point

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −50 V

−−10

IE = 0; VCB = −50 V; Tamb = 125 °C

−−10

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−50

hFE

DC current gain

IC = −0.1 mA; VCE = −1V

−

IC = −1 mA; VCE = −1 V

100

−

IC = −10 mA; VCE = −1 V

100

−

IC = −150 mA; VCE = −2 V

100

300

IC = −500 mA; VCE = −2V

−

VCEsat

collector-emitter saturation

voltage

IC = −150 mA; IB = −15 mA

−−400

IC = −500 mA; IB = −50 mA

−−1.6

VBEsat

base-emitter saturation voltage

IC = −150 mA; IB = −15 mA

−−1.3

IC = −500 mA; IB = −50 mA

−−2.6

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−

8pF

emitter capacitance

IC =ic = 0; VEB = −500 mV; f = 1 MHz −

transition frequency

IC = −20 mA; VCE = −10 V;

f = 100 MHz

200

−

MHz

Switching times (between 10% and 90% levels); (see Fig.2)

ton

turn-on time

ICon = −150 mA; IBon = −15 mA;

IBoff =15mA

−

delay time

−

rise time

−

toff

turn-off time

−

365

storage time

−

300

fall time

−

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