PUMH2 datasheet(5/8 Pages) PHILIPS

номер детали	PUMH2

подробное описание детали	NPN resistor-equipped double transistor

PDF	8 Pages

Scroll/Zoom	100%

производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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5 / 8 page

1999 Aug 03

Philips Semiconductors

Product speciﬁcation

NPN resistor-equipped double transistor

PUMH2

Fig.3

DC current gain as a function of collector

current; typical values.

VCE =5V.

(1) Tamb = 150 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

103

102

MDA997

10−1

110

hFE

IC (mA)

102

(3)

(2)

(1)

Fig.4

Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

10−1

10−2

MDA996

10−1

(2)

(3)

IC (mA)

VCEsat

(V)

102

(1)

Fig.5

Input-off voltage as a function of collector

current; typical values.

VCE =5V.

(1) Tamb = −40 °C.

(2) Tamb =25 °C.

(3) Tamb = 100 °C.

handbook, halfpage

10−1

MDA999

10−2

10−1

IC (mA)

Vi(off)

(V)

(2)

(3)

(1)

Fig.6

Input-on voltage as a function of collector

current; typical values.

VCE = 0.3 V.

(1) Tamb = −40 °C.

(2) Tamb =25 °C.

(3) Tamb = 100 °C.

handbook, halfpage

102

10−1

MDA998

10−1

110

Vi(on)

(V)

IC (mA)

102

(2)

(1)

(3)

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