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FDV303 датащи(PDF) 4 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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FDV303 датащи(HTML) 4 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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4 / 5 page ![]() 0 0.4 0.8 1.2 1.6 2 0 1 2 3 4 5 Q , GATE CHARGE (nC) g I = 0.5A D 10V 15V V = 5V DS 0.1 0.2 0.5 1 2 5 10 20 40 0.01 0.03 0.1 0.3 1 3 5 V , DRAI N-SOURCE VOLTAGE (V) V = 4.5V SINGLE PULSE R =357°C/W T = 25°C GS θJA DS DC 1s 10ms 100ms 10s RDS(ON) LIMIT A 1ms 0.001 0.01 0.1 1 10 100 300 0 1 2 3 4 5 SINGLE PULSE TIME (SEC) SINGLE PULSE R =357° C/W T = 25°C θJA A Figure 10. Single Pulse Maximum Power Dissipation. 0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TIME (sec) Duty Cycle, D = t /t 1 2 R (t) = r(t) * R R = 357 °C/W θJA θJA θJA T - T = P * R (t) θJA A J P(pk) t1 t 2 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 Figure 11. Transient Thermal Response Curve. 0.1 0.5 1 2 5 10 25 5 10 20 50 100 150 V , DRAIN TO SOURCE VOLTAGE (V) DS Ciss f = 1 MHz V = 0V GS Coss Crss Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. Figure 9. Maximum Safe Operating Area. Typical Electrical And Thermal Characteristics Rev:2023A2 4 N-Channel 25 V (D-S) MOSFET FDV303 |
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