FDN359B datasheet(4/6 Pages) EVVOSEMI

номер детали	FDN359B

подробное описание детали	N-Channel 30 V (D-S) MOSFET

PDF	6 Pages

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Typical Characteristics

00.511.522.5

VDS, DRAIN-SOURCE VOLTAGE (V)

3.5V

4.0V

VGS = 10V

3.0V

2.5V

4.5V

0.6

1.4

1.8

2.2

2.6

ID, DRAIN CURRENT (A)

VGS = 3.0V

6.0

5.0V

4.5V

4.0V

3.5V

10.0V

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.8

0.9

1.1

1.2

-50

-25

100

125

150

TJ, JUNCTION TEMPERATURE (

oC)

ID = 2.7A

VGS = 10V

0.02

0.04

0.06

0.08

2468

VGS, GATE TO SOURCE VOLTAGE (V)

ID = 1.35A

TA = 125

TA = 25

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

11.52

2.533.5

VGS, GATE TO SOURCE VOLTAGE (V)

TA = 125

-55

VDS = 5V

0.0001

0.001

0.01

0.1

100

0.2

0.4

0.6

0.8

1.2

1.4

VSD, BODY DIODE FORWARD VOLTAGE (V)

TA = 125

-55

VGS = 0V

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

Rev:2023A2

N-Channel 30 V (D-S) MOSFET

FDN359B

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