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FDN352 датащи(PDF) 3 Page - EVER SEMICONDUCTOR CO.,LIMITED

номер детали FDN352
подробное описание детали  P-Channel 30 V (D-S) MOSFET
PDF  5 Pages
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производитель  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
домашняя страница  https://www.evvosemi.com
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FDN352 датащи(HTML) 3 Page - EVER SEMICONDUCTOR CO.,LIMITED

  FDN352 Datasheet HTML 1Page - EVER SEMICONDUCTOR CO.,LIMITED FDN352 Datasheet HTML 2Page - EVER SEMICONDUCTOR CO.,LIMITED FDN352 Datasheet HTML 3Page - EVER SEMICONDUCTOR CO.,LIMITED FDN352 Datasheet HTML 4Page - EVER SEMICONDUCTOR CO.,LIMITED FDN352 Datasheet HTML 5Page - EVER SEMICONDUCTOR CO.,LIMITED  
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Typical Characteristics
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0
246
8
10
-I
D, DRAIN CURRENT (A)
V
GS = -4.0V
-10V
-6.0V
-5.0V
-7.0V
-4.5V
-8.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (
oC)
I
D = -0.9A
V
GS = -10V
0.1
0.2
0.3
0.4
0.5
0.6
0.7
24
68
10
-V
GS, GATE TO SOURCE VOLTAGE (V)
I
D = -0.45A
T
A = 125
oC
T
A = 25
oC
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
2
4
6
8
10
12
34
56
78
-V
GS , GATE TO SOURCE VOLTAGE (V)
T
A = -55
oC
25
oC
125
oC
V
DS = -5V
0.0001
0.001
0.01
0.1
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-V
SD, BODY DIODE FORWARD VOLTAGE (V)
V
GS = 0V
T
A = 125
oC
25
oC
-55
oC
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
0
2
4
6
8
10
0123
45
-V
DS, DRAIN TO SOURCE VOLTAGE (V)
V
GS = -10V
-4.5V
-3.5V
-3.0V
-6.0V
-4.0V
Rev:2023A2
3
P-Channel 30 V (D-S) MOSFET
FDN352



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