1997 Feb 18

4

Philips Semiconductors

Product specification

NPN microwave power transistors

PTB32001X; PTB32003X;

PTB32005X

Fig.4

Power derating curve; PTB32005X.

f > 1 MHz.

handbook, halfpage

−50

200

10

0

MLC093

5

0

50

100

150

Ptot

(W)

Tmb (

THERMAL CHARACTERISTICS

Note

1. See

“Mounting recommendations in the General part of handbook SC19a”.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

thermal resistance from junction to mounting base

PTB32001X

22

K/W

PTB32003X

12

K/W

PTB32005X

10.5

K/W

thermal resistance from mounting base to heatsink

0.7

K/W