FDN306P datasheet(1/5 Pages) EVVOSEMI

номер детали	FDN306P

подробное описание детали	P-Channel 1.8 V (D-S) MOSFET

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General Description

This

P-Channel

1.8V

specified

MOSFET

uses

Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management

applications.

Applications

• Battery management

• Load switch

• Battery protection

Features

• –2.6 A, –12 V. RDS(ON) = 40 mΩ @ VGS = –4.5 V

RDS(ON) = 50 m

Ω @ VGS = –2.5 V

RDS(ON) = 80 m

Ω @ VGS = –1.8 V

• Fast switching speed

• High performance trench technology for extremely

low RDS(ON)

• SuperSOT

TM -3 provides low RDS(ON) and 30% higher

power handling capability than SOT23 in the same

footprint

D

S

G

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

–12

V

VGSS

Gate-Source Voltage

±8

V

ID

Drain Current – Continuous

(Note 1a)

–2.6

A

– Pulsed

–10

Maximum Power Dissipation

(Note 1a)

0.5

PD

(Note 1b)

0.46

W

TJ, TSTG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

250

°C/W

RθJC

Thermal Resistance, Junction-to-Case

(Note 1)

75

°C/W

P-Channel 1.8 V (D-S) MOSFET

FDN306

Rev:2023A2

1

SOT–23

1. GATE

2. SOURCE

3. DRAIN

Аналогичный номер детали - FDN306P

производитель	номер детали	датащи	подробное описание детали
Fairchild Semiconductor	FDN306P	144Kb / 5P	P-Channel 1.8V Specified PowerTrench MOSFET
TECH PUBLIC Electronics...	FDN306P	1,001Kb / 3P	Single P-Channel PowerTrench MOSFET
Guangdong Youtai Semico...	FDN306P	468Kb / 5P	P-Channel 1.8 V (D-S) MOSFET
ON Semiconductor	FDN306P	247Kb / 7P	P-Channel 1.8V Specified PowerTrench® MOSFET December 2001 Rev D
VBsemi Electronics Co.,...	FDN306P-NL	1Mb / 9P	P-Channel 20-V (D-S) MOSFET

More results

Аналогичное описание - FDN306P

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI1305DL	42Kb / 4P	P-Channel 1.8-V (G-S) MOSFET 07-Apr-03
	SI1307DL	68Kb / 4P	P-Channel 1.8-V (G-S) MOSFET 01-Nov-99
	SI1407DL	64Kb / 4P	P-Channel 1.8-V (G-S) MOSFET 17-Jul-00
	SI1305DL	109Kb / 5P	P-Channel 1.8-V (G-S) MOSFET 13-Jun-05
	SI4465ADY	216Kb / 4P	P-Channel 1.8-V (G-S) MOSFET 01-Jan-07
	SI6467BDQ	196Kb / 4P	P-Channel 1.8-V (G-S) MOSFET 12-Dec-05
	SI2311DS-T1-E3	214Kb / 8P	P-Channel 1.8-V (G-S) MOSFET 24-Mar-08
	SI6467BDQ-T1-E3	208Kb / 11P	P-Channel 1.8-V (G-S) MOSFET 31-Mar-08
	SI1407DL-T1	80Kb / 5P	P-Channel 1.8-V (G-S) MOSFET 12-Jun-06
Guangdong Youtai Semico...	FDN306P	468Kb / 5P	P-Channel 1.8 V (D-S) MOSFET

More results

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Аналогичный номер детали - FDN306P

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