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FDN302P датащи(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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FDN302P датащи(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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1 / 5 page ![]() General Description This P-Channel 2.5V has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Applications • Power management • Load switch • Battery protection Features • –20 V, –2.4 A. R DS(ON) = 55m Ω @ V GS = –4.5 V RDS(ON) = 80 m Ω @ V GS = –2.5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) • SuperSOTTM -3 provides low R DS(ON) and 30% higher power handling capability than SOT23 in the same footprint D S G Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ±12 V ID Drain Current – Continuous (Note 1a) –2.4 A – Pulsed –10 Maximum Power Dissipation (Note 1a) 0.5 PD (Note 1b) 0.46 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W P-Channel 2.5 V (D-S) MOSFET FDN302P Rev:2023A2 1 SOT–23 1. GATE 2. SOURCE 3. DRAIN |
Аналогичный номер детали - FDN302P |
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Аналогичное описание - FDN302P |
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