поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

FDN361 датащи(PDF) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

номер детали FDN361
подробное описание детали  MOSFET
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
домашняя страница  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

FDN361 датащи(HTML) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

  FDN361 Datasheet HTML 1Page - EVER SEMICONDUCTOR CO.,LIMITED FDN361 Datasheet HTML 2Page - EVER SEMICONDUCTOR CO.,LIMITED FDN361 Datasheet HTML 3Page - EVER SEMICONDUCTOR CO.,LIMITED FDN361 Datasheet HTML 4Page - EVER SEMICONDUCTOR CO.,LIMITED FDN361 Datasheet HTML 5Page - EVER SEMICONDUCTOR CO.,LIMITED  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
ID = 250
PA
30
V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient
ID = 250
PA,Referenced to 25qC
26
mV/
qC
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V,
VGS = 0 V
1
PA
VDS = 24 V, VGS = 0 V, TJ = 55
qC
10
PA
IGSS
Gate–Body Leakage
VGS =
r20 V,
VDS = 0 V
r100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
ID = 250
PA
1
2.1
3
V
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
ID = 1.4 A
VGS = 4.5 V,
ID = 1.2 A
92
120
110
160
m
:
ID(on)
On–State Drain Current
VGS = 4.5 V,
VDS = 5 V
3.5
A
gFS
Forward Transconductance
VDS = 5 V,
ID = 1.4 A
4
S
Dynamic Characteristics
Ciss
Input Capacitance
145
193
pF
Coss
Output Capacitance
35
47
pF
Crss
Reverse Transfer Capacitance
VDS = 15 V,
V GS = 0 V,
f = 1.0 MHz
15
23
pF
RG
Gate Resistance
VGS = 15 mV,
f = 1.0 MHz
1.6
:
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
3
6
ns
tr
Turn–On Rise Time
8
16
ns
td(off)
Turn–Off Delay Time
16
29
ns
tf
Turn–Off Fall Time
VDD = 15 V,
ID = 1 A,
VGS = 10 V,
RGEN = 6
:
2
4
ns
Qg
Total Gate Charge
1.3
1.8
nC
Qgs
Gate–Source Charge
0.5
nC
Qgd
Gate–Drain Charge
VDS = 15 V,
ID = 1.4 A,
VGS = 4.5 V
0.5
nC
Drain–Source Diode Characteristics
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 0.42 A
(Note 2)
0.8
1.2
V
trr
Diode Reverse Recovery Time
IF = 1.4 A,
diF/dt = 100 A/µs
11
22
nS
Qrr
Diode Reverse Recovery Charge
4
nC
Notes:
1.
RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RTJC is guaranteed by design while RTCA is determined by the user's board design.
a) 250
qC/W when mounted on a
0.02 in2 pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
d 300 Ps, Duty Cycle d 2.0%
FDN361
Rev:2023A2
2



Html Pages

1 2 3 4 5


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com