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K3020P датащи(PDF) 2 Page - Vishay Siliconix

номер детали K3020P
подробное описание детали  Optocoupler, Phototriac Output, 400 VDRM
PDF  5 Pages
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производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

K3020P датащи(HTML) 2 Page - Vishay Siliconix

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For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83505
2
Rev. 2.1, 09-Mar-10
K3020P, K3020PG Series
Vishay Semiconductors
Optocoupler, Phototriac Output,
400 VDRM
Notes
(1) Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Notes
(1) Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(2) Test voltage must be applied within dV/dt ratings.
(3) IFT is defined as a minimum trigger current.
COUPLER
Isolation voltage
t = 1 s
VISO
5300
VRMS
Creepage distance
 7mm
Clearance distance
 7mm
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
 1012
VIO = 500 V, Tamb = 100 °C
RIO
 1011
Total power dissipation
Ptot
350
mW
Storage temperature range
Tstg
- 55 to + 100
°C
Ambient temperature
Tamb
- 40 to + 85
°C
Junction temperature
Tj
100
°C
Lead soldering temperature (2)
2 mm from case, t < 10 s
Tsld
260
°C
ABSOLUTE MAXIMUM RATINGS (1) (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
ELECTRICAL CHARACTERISTICS (1) (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 50 mA
VF
1.3
1.6
V
Reverse voltage
IR = 10 µA
VR
5V
Junction capacitance
VR = 0 V, f = 1 MHz
Cj
50
pF
OUTPUT
Forward peak off-state voltage
(repetitive)
IDRM = 100 nA
VDRM (2)
400
V
Peak on-state voltage
ITM = 100 mA
VTM
1.5
3
V
Critical rate of rise of off-state
voltage
IF = 0 A, VD = 0.67 VDRM
dV/dtcr
10
V/µs
Critical rate of rise of on-state
current commutation
VD = 30 VRMS, ID = 15 mARMS
dV/dtcrq
0.1
0.15
V/µs
COUPLER (3)
Emitting diode trigger current
VS = 3 V, RL = 150 
K3020P
IFT
15
30
mA
K3020PG
IFT
15
30
mA
K3021P
IFT
815
mA
K3021PG
IFT
815
mA
K3022P
IFT
510
mA
K3022PG
IFT
510
mA
K3023P
IFT
35
mA
K3023PG
IFT
35
mA
K3036P
IFT
23.6
mA
K3036PG
IFT
23.6
mA
Holding current
IF = 10 mA, VS 3 V
IH
200
µA



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