PMBTH10 datasheet(3/7 Pages) PHILIPS

номер детали	PMBTH10

подробное описание детали	NPN 1 GHz general purpose switching transistor

PDF	7 Pages

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производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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September 1995

Philips Semiconductors

Product speciﬁcation

NPN 1 GHz general purpose switching transistor

PMBTH10

THERMAL RESISTANCE

Note

1. Ts is the temperature at the soldering point of the collector tab.

CHARACTERISTICS

Tj =25 °C.

SYMBOL

PARAMETER

THERMAL RESISTANCE

Rth j-s

from junction to soldering point (note 1)

260 K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V(BR)CBO

collector-base breakdown voltage

open emitter; IC = 100 µA; IE =0

−

V(BR)CEO

collector-emitter breakdown voltage

open base; IC = 1 mA; IB =0

−

V(BR)EBO

emitter-base breakdown voltage

open collector; IE =10 µA; IC =0

−

VCE sat

collector-emitter saturation voltage

IC = 4 mA; IB = 0.4 mA

−

0.5

VBE on

base-emitter ON voltage

VCE = 10 V; IC = 4 mA

−

0.95

ICBO

collector-base cut-off current

VCB = 25 V; IE =0

−

100

IEBO

emitter-base cut-off current

VCB = 25 V; IC =0

−

100

hFE

DC current gain

VCE = 10 V; IC = 4 mA

−

Cre

collector-emitter feedback

capacitance

VCB = 10 V; IE =ie =0;

f = 1 MHz

−

0.7

Crb

collector-base feedback capacitance

VCB = 10 V; IC =ic =0;

f = 1 MHz

0.35

0.65

transition frequency

VCE = 10 V; IC = 4 mA;

f = 100 MHz; Tamb =25 °C

650

−

MHz

rbCc

collector-base time constant

VCB = 10 V; IC = 4 mA;

f = 100 MHz; Tamb =25 °C

−

9ps

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