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IRF7424TR датащи(PDF) 4 Page - EVER SEMICONDUCTOR CO.,LIMITED

номер детали IRF7424TR
подробное описание детали  P-Channel 30 V (D-S) MOSFET
PDF  9 Pages
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производитель  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
домашняя страница  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

IRF7424TR датащи(HTML) 4 Page - EVER SEMICONDUCTOR CO.,LIMITED

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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
-V
,Source-to-Drain Voltage (V)
SD
V
= 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
1
10
100
0
1000
2000
3000
4000
5000
6000
-V
, Drain-to-Source Voltage (V)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C
SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
1
10
100
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
-V
, Drain-to-Source Voltage (V)
DS
100us
1ms
10ms
0
20
40
60
80
0
2
4
6
8
10
12
Q , Total Gate Charge (nC)
G
I =
D
-11A
V
=-15V
DS
V
=-24V
DS
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Rev:2023A2
4
P-Channel 30 V (D-S) MOSFET
IRF7424



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