IRF7413 datasheet(1/8 Pages) EVVOSEMI

номер детали	IRF7413

подробное описание детали	MOSFET

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производитель	EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]

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Symbol

Parameter

Units

VDS

Drain-to-Source Voltage

VGS

Gate-to-Source Voltage

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V

ID @ TA = 70°C

Continuous Drain Current, VGS @ 10V

A

IDM

Pulsed Drain Current

c

PD @TA = 25°C

Power Dissipation

W

Linear Derating Factor

mW/°C

EAS

Single Pulse Avalanche Energency

d

mJ

dv/dt

Peak Diode Recovery dv/dt

e

V/ns

TJ, TSTG

Junction and Storage Temperature Range

°C

Symbol

Parameter

TypMax

Units

RθJL

Junction-to-Drain Lead

–––

20

RθJA

Junction-to-Ambient

g

–––

50

V

2.5

Max

30

± 20

13

Thermal Resistance Ratings

Absolute Maximum Ratings

°C/W

9.2

5.0

0.02

260

-55 to +150

58

Generation VTechnology

Ultra Low On-Resistance

N-Channel Mosfet

Surface Mount

Available in Tape &Reel

Dynamic dv/dt Rating

Fast Switching

100% Rg Tested

Lead-Free

Features

VDS (V) = 30V

RDS(ON)

12m

(VGS = 10V)

RDS(ON)

17m

(VGS = 4.5V)

IRF7413

Rev:2023A2

1

Application

Аналогичный номер детали - IRF7413

производитель	номер детали	датащи	подробное описание детали
International Rectifier	IRF7413	123Kb / 8P	Power MOSFET(Vdss=30V, Id=12A)
Guangdong Kexin Industr...	IRF7413	1Mb / 6P	N-Channel MOSFET
Guangdong Youtai Semico...	IRF7413	422Kb / 8P	Generation VTechnology
International Rectifier	IRF7413A	116Kb / 9P	Power MOSFET(Vdss=30V, Rds(on)=0.0135ohm)
International Rectifier	IRF7413GPBF	264Kb / 9P	Ultra Low On-Resistance

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Аналогичное описание - IRF7413

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IRF7413 датащи(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

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Аналогичный номер детали - IRF7413

Аналогичное описание - IRF7413

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