Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

‚ ISD ≤ 2.4A, di/dt ≤ 73A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.

„ Surface mounted on FR-4 board, t ≤ 10sec.

Rev:2023A2

2

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

30

V

VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

0.032

V/°C Reference to 25°C, ID = 1mA

50

VGS = 10V, ID = 2.4A ƒ

80

VGS = 4.5V, ID = 2.0A ƒ

VGS(th)

Gate Threshold Voltage

1.0

V

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

5.2

S

VDS = 15V, ID = 2.4A

1.0

VDS = 24V, VGS = 0V

25

VDS = 24V, VGS = 0V, TJ = 125 °C

Gate-to-Source Forward Leakage

100

VGS = 20V

Gate-to-Source Reverse Leakage

-100

VGS = - 20V

Qg

Total Gate Charge

25

ID = 2.4A

Qgs

Gate-to-Source Charge

2.9

nC

VDS = 24V

Qgd

Gate-to-Drain ("Miller") Charge

7.9

VGS = 10V, See Fig. 6 and 12 ƒ

td(on)

Turn-On Delay Time

6.8

VDD = 15V

tr

Rise Time

21

ID = 2.4A

td(off)

Turn-Off Delay Time

22

RG = 6.0Ω

tf

Fall Time

7.7

RD = 6.2Ω, See Fig. 10 ƒ

Between lead tip

and center of die contact

Ciss

Input Capacitance

520

VGS = 0V

Coss

Output Capacitance

180

pF

VDS = 25V

Crss

Reverse Transfer Capacitance

72

ƒ = 1.0MHz, See

Fig. 5

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode) 

p-n junction diode.

VSD

Diode Forward Voltage

1.0

V

TJ = 25°C, IS = 1.8A, VGS = 0V ƒ

trr

Reverse Recovery Time

47

71

ns

TJ = 25°C, IF = 2.4A

Qrr

Reverse RecoveryCharge

56

84

nC

di/dt = 100A/µs ƒ

ton

Forward Turn-On Time

Source-Drain Ratings and Characteristics

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

20

2.5

A

S

D

G

IGSS

IDSS

Drain-to-Source Leakage Current

LS

Internal Source Inductance

6.0

LD

Internal Drain Inductance

4.0

nH

ns

nA

µA

Ω

RDS(ON)

Static Drain-to-Source On-Resistance

S

D

G

m

IRF7303

Dual N-Channel MOSFET