Specifications and information are subject to change without notice

WJ Communications, Inc

• Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com

Page 4 of 5

October 2006

SCG015

¼ Watt, High Linearity InGaP HBT Amplifier

Product Information

The Communications Edge

TM

2450 MHz Reference Design

Typical RF Performance at 25

°C

∗ Please see note 2 on page 1.

RES

ID=R3

R=220 Ohm

CAP

ID=C4

C=56 pF

CAP

ID=C5

C=56 pF

CAP

ID=C1

C=56 pF

IND

ID=L2

L=15 nH

RES

ID=R1

R=30 Ohm

IND

ID=L1

L=15 nH

CAP

ID=C2

C=1000 pF

CAP

CAP

ID=C6

C=56 pF

RES

ID=R4

R=22 Ohm

DIODE1

ID=D1

CAP

ID=C8

C=1 pF

RES

ID=L3

R=0 Ohm

RES

ID=R2

R=390 Ohm

SUBCKT

NET="SCG015"

PORT

P=2

Z=50 Ohm

PORT

P=1

Z=50 Ohm

+8 V

ID=C3

C=.1uF

a system using a DC regulator.

boards. It is not specifically required in the final circuit layout in

The diode D1 is used as over-voltage protection on the evaluation

8.2 v

C8 is placed half way between silkscreen marker ‘3’ and ‘4’ or center of component placed at 23 deg. @ 2.45 GHz away from pin 3.

Ssg, OIP3 and P1dB vs.

Temperature at 2.45GHz

14

16

18

20

22

24

26

-40

-15

10

35

60

85

Temperature (°C)

38

39

40

41

42

43

44

Ssg

P1dB

OIP3

Frequency

2450 MHz

S21 – Gain

14.5 dB

S11 – Input Return Loss

-12 dB

S22 – Output Return Loss

-9 dB

Output P1dB

+23 dBm

Output IP3

∗

(+9 dBm / tone, 1 MHz spacing)

+40 dBm

Noise Figure

5 dB

Device Voltage

+5 V

Quiescent Current

100 mA