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IPAN60R180CM8 датащи(PDF) 5 Page - Infineon Technologies AG

номер детали IPAN60R180CM8
подробное описание детали  MOSFET 600V CoolMOSª CM8 Power Transistor
PDF  14 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPAN60R180CM8 датащи(HTML) 5 Page - Infineon Technologies AG

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5
600VCoolMOSªCM8PowerTransistor
IPAN60R180CM8
Rev.2.1,2024-03-21
Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Drain-source breakdown voltage
V(BR)DSS
600
-
-
V
VGS=0V,ID=1mA
Gate threshold voltage
V(GS)th
3.7
4.2
4.7
V
VDS=VGS,ID=0.14mA
Zero gate voltage drain current
IDSS
-
-
-
20.8
1
-
µA
VDS=600V,VGS=0V,Tj=25°C
VDS=600V,VGS=0V,Tj=150°C
Gate-source leakage current
IGSS
-
-
1.6
µA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
-
0.150
0.331
0.180
-
Ω
VGS=10V,ID=5.6A,Tj=25°C
VGS=10V,ID=5.6A,Tj=150°C
Gate resistance
RG
-
12
-
Ω
f=1MHz
Table5Dynamiccharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Input capacitance
Ciss
-
743
-
pF
VGS=0V,VDS=400V,f=250kHz
Output capacitance
Coss
-
11
-
pF
VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
related
1)
Co(er)
-
30
-
pF
VGS=0V,VDS=0...400V
Effective output capacitance, time
related
2)
Co(tr)
-
301
-
pF
ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time
td(on)
-
17.2
-
ns
VDD=400V,VGS=13V,ID=2.8A,
RG=10.0
Ω;seetable9
Rise time
tr
-
6
-
ns
VDD=400V,VGS=13V,ID=2.8A,
RG=10.0
Ω;seetable9
Turn-off delay time
td(off)
-
88.4
-
ns
VDD=400V,VGS=13V,ID=2.8A,
RG=10.0
Ω;seetable9
Fall time
tf
-
12.8
-
ns
VDD=400V,VGS=13V,ID=2.8A,
RG=10.0
Ω;seetable9
Table6Gatechargecharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Gate to source charge
Qgs
-
5
-
nC
VDD=400V,ID=2.8A,VGS=0to10V
Gate to drain charge
Qgd
-
6
-
nC
VDD=400V,ID=2.8A,VGS=0to10V
Gate charge total
Qg
-
17
-
nC
VDD=400V,ID=2.8A,VGS=0to10V
Gate plateau voltage
Vplateau
-
6.1
-
V
VDD=400V,ID=2.8A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V



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