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IPAN60R180CM8 датащи(PDF) 5 Page - Infineon Technologies AG |
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IPAN60R180CM8 датащи(HTML) 5 Page - Infineon Technologies AG |
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5 / 14 page ![]() 5 600VCoolMOSªCM8PowerTransistor IPAN60R180CM8 Rev.2.1,2024-03-21 Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 3.7 4.2 4.7 V VDS=VGS,ID=0.14mA Zero gate voltage drain current IDSS - - - 20.8 1 - µA VDS=600V,VGS=0V,Tj=25°C VDS=600V,VGS=0V,Tj=150°C Gate-source leakage current IGSS - - 1.6 µA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - - 0.150 0.331 0.180 - Ω VGS=10V,ID=5.6A,Tj=25°C VGS=10V,ID=5.6A,Tj=150°C Gate resistance RG - 12 - Ω f=1MHz Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 743 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 11 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related 1) Co(er) - 30 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related 2) Co(tr) - 301 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 17.2 - ns VDD=400V,VGS=13V,ID=2.8A, RG=10.0 Ω;seetable9 Rise time tr - 6 - ns VDD=400V,VGS=13V,ID=2.8A, RG=10.0 Ω;seetable9 Turn-off delay time td(off) - 88.4 - ns VDD=400V,VGS=13V,ID=2.8A, RG=10.0 Ω;seetable9 Fall time tf - 12.8 - ns VDD=400V,VGS=13V,ID=2.8A, RG=10.0 Ω;seetable9 Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 5 - nC VDD=400V,ID=2.8A,VGS=0to10V Gate to drain charge Qgd - 6 - nC VDD=400V,ID=2.8A,VGS=0to10V Gate charge total Qg - 17 - nC VDD=400V,ID=2.8A,VGS=0to10V Gate plateau voltage Vplateau - 6.1 - V VDD=400V,ID=2.8A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V |
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