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FDV301N датащи(PDF) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

номер детали FDV301N
подробное описание детали  MOSFET
PDF  7 Pages
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производитель  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
домашняя страница  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

FDV301N датащи(HTML) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

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Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
SPECIFICATIONS
TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
20
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = 250 µA
25
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
- 2.6
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
0.45
1.0
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
1
µA
VDS = 20 V, VGS = 0 V, TJ = 70 °C
10
On-State Drain Currenta
ID(on)
VDS ≤ 5 V, VGS = 4.5 V
20
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 4.5 V, ID = 5.0 A
28
VGS = 2.5 V, ID = 4.7 A
42
m
Ω
VGS = 1.8 V, ID = 4.3 A
50
Forward Transconductancea
gfs
VDS = 10 V, ID = 5.0 A
24
S
Dynamicb
Input Capacitance
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
865
pF
Output Capacitance
Coss
105
Reverse Transfer Capacitance
Crss
55
Total Gate Charge
Qg
VDS = 10 V, VGS = 5 V, ID = 5.0 A
12
18
nC
VDS = 10 V, VGS = 4.5 V, ID = 5.0 A
8.8
14
Gate-Source Charge
Qgs
1.1
Gate-Drain Charge
Qgd
0.7
Gate Resistance
Rg
f = 1 MHz
0.5
2.4
4.8
Ω
Turn-On Delay Time
td(on)
VDD = 10 V, RL = 2.2 Ω
ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω
816
ns
Rise Time
tr
17
26
Turn-Off Delay Time
td(off)
31
47
Fall Time
tf
816
Turn-On Delay Time
td(on)
VDD = 10 V, RL = 2.2 Ω
ID ≅ 4 A, VGEN = 5 V, Rg = 1 Ω
510
Rise Time
tr
13
20
Turn-Off Delay Time
td(off)
21
32
Fall Time
tf
612
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
1.75
A
Pulse Diode Forward Current
ISM
20
Body Diode Voltage
VSD
IS = 4 A, VGS = 0 V
0.75
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C
12
20
ns
Body Diode Reverse Recovery Charge
Qrr
510
nC
Reverse Recovery Fall Time
ta
7
ns
Reverse Recovery Rise Time
tb
5
N-Channel 20 V (D-S) MOSFET
FDV301N
8
Rev:2023A2
2



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