2SC945 datasheet(1/3 Pages) EVVOSEMI

номер детали	2SC945

подробное описание детали	NPN Transistors

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■

Features

●

Collector current up to 150mA

●

High hFE linearity

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector to base voltage

VCBO

60

V

Collector to emitter voltage

VCEO

50

V

Emitter to base voltage

VEBO

5

V

Collector current (DC)

IC

150

mA

Power dissipation

PC

200

mW

Junction temperature

Tj

150

℃

Storage temperature range

Tstg

-55 to +150

℃

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO IC=100 μA, IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO IC=1mA , IB=0

50

V

Emitter-base breakdown voltage

V(BR)EBO IE=100 μA, IC=0

5

V

Collector cutoff current

ICBO

VCB = 60V, IE = 0

0.1

μA

Emitter cutoff current

IEBO

VEB = 5.0 V, IC = 0

0.1

μA

VCE = 6.0V, IC =1.0mA

130

400

VCE = 6.0V, IC =0.1mA

40

Collector saturation voltage

VCE(sat)

IC=100mA,IB=10mA

0.3

V

Base saturation voltage

VBE(sat)

IC=100mA,IB=10mA

1.0

V

Collector to base capacitance

Cob

VCB = 10 V, IE = 0 , f = 1 MHz

3.0

pF

Noise figure

NF

VCE=6V,IC=0.1mA,Rg=10kΩ,f=1kMHZ

4

10

dB

Transition frequency

fT

VCE=6V,IC=10mA,f =30 MHz

150

MHz

DC current gain

hFE

■

Classification of hfe(1)

Complementary to 2SA733

Type

2SC945-L

2SC945-H

Range

130-200

200-400

Marking

CRL

CR

2SC945

NPN Transistors

1

2

3

1.Base

2.Emitter

3.Collector

■

Simplified outline(SOT-23)

1

Rev:2022A2

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