PIP3115-B datasheet(3/6 Pages) PHILIPS

3 / 6 page

Philips Semiconductors

Product specification

Logic level TOPFET

PIP3115-B

OUTPUT CHARACTERISTICS

Limits are for -40˚C

≤ T

mb ≤ 150˚C; typicals are for Tmb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Off-state

IS = 0 V

(CL)DSS

Drain-source clamping voltage

D = 10 mA

DM = 1 A; tp ≤ 300 µs; δ ≤ 0.01

DSS

Drain source leakage current

DS = 40 V

100

µA

mb = 25 ˚C

0.1

µA

On-state

DM = 3 A; tp ≤ 300 µs; δ ≤ 0.01

DS(ON)

Drain-source resistance

IS ≥ 4.4 V

190

Ω

mb = 25 ˚C

100

Ω

IS ≥ 4 V

200

Ω

mb = 25 ˚C

105

Ω

OVERLOAD CHARACTERISTICS

-40˚C

≤ T

mb ≤ 150˚C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Short circuit load

DS = 13 V

Drain current limiting

IS = 5 V;

mb = 25˚C

4.4 V

≤ V

IS ≤ 5.5 V

4 V

≤ V

IS ≤ 5.5 V

Overload protection

IS = 5 V;

mb = 25˚C

D(TO)

Overload power threshold

device trips if P

D > PD(TO)

DSC

Characteristic time

which determines trip time

200

350

600

µs

Overtemperature protection

j(TO)

Threshold junction

150

170

˚C

temperature

1 Trip time t

d sc varies with overload dissipation PD according to the formula td sc ≈ TDSC / ln[ PD / PD(TO) ].

2 This is independent of the dV/dt of input voltage V

IS.

May 2001

Rev 1.000

PIP3115-B датащи(PDF) 3 Page - NXP Semiconductors

PIP3115-B датащи(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6

датащи скачать

ссылки URL