Barrier Silicon Schottky Diodes

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product(s) or information contained herein without notice. M/A-COM makes

no warranty, representation or guarantee regarding the suitability of its

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information.

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2

V5

MA4E2502 Series

Electrical Specifications @ 25 °C

Handling

All semiconductor chips should be handled with care

to avoid damage or contamination from perspiration

and skin oils. The use of plastic tipped tweezers or

vacuum

pickups

is

strongly

recommended

for

individual components. The top surface of the die

has a protective polyimide coating to minimize

damage.

The rugged construction of these SurMount devices

allows the use of standard handling and die attach

techniques. It is important to note that industry

standard electrostatic discharge (ESD) control is

required at all times, due to the sensitive nature of

Schottky junctions.

Bulk handling should insure that abrasion and

mechanical shock are minimized.

Die Bonding

Die attach for these devices is made simple through

the use of surface mount die attach technology.

Mounting pads are conveniently located on the

bottom surface of these devices, and are opposite

the active junction. The devices are well suited for

high temperature solder attachment onto hard

substrates. 80Au/20Sn and Sn63/Pb37 solders are

acceptable for usage. Die attach with Electrically

Conductive Silver Epoxy is Not Recommended.

For Hard substrates, we recommend utilizing a

vacuum tip and force of 60 to 100 grams applied

uniformly to the top surface of the device, using a

hot gas bonder with equal heat applied across the

bottom mounting pads of the device. When soldering

to soft substrates, it is recommended to use a

lead-tin interface at the circuit board mounting pads.

Position the die so that its mounting pads are

aligned with the circuit board mounting pads. Reflow

the solder paste by applying Equal heat to the circuit

at both die-mounting pads. The solder joint must Not

be made one at a time, creating un-equal heat flow

and thermal stress. Solder reflow should Not be

performed by causing heat to flow through the top

surface of the die. Since the HMIC glass is

transparent, the edges of the mounting pads can be

visually inspected through the die after die attach is

completed.

Absolute Maximum Ratings @ 25 °C

(Unless Otherwise Noted)

1

1. Operation of this device above any one of these parameters

may cause permanent damage.

Parameter

Absolute Maximum

Operating Temperature

-40 °C to +125 °C

Storage Temperature

-40 °C to +150 °C

Junction Temperature

+175 °C

Forward Current

20 mA

Reverse Voltage

5 V

RF C.W. Incident Power

+ 20 dBm

RF & DC Dissipated Power

50 mW

Rt is the dynamic slope resistance where

Rt = Rs + Rj, where Rj = 26 / Idc (Idc is in mA)

Model

Number

Type

Recommended

Frequency Range

Vf @ 1 mA

( mV )

Vb @ 10 uA

( V )

Ct @ 0V

( pF )

Rt Slope Resistance

( Vf1 - Vf2 )/(10.5mA-9.5mA )

(

Ω )

MA4E2502L

Low

Barrier

DC - 18 GHz

330 Max

300 Typ

3 Min

5 Typ

0.12 Max

0.10 Typ

16 Typ

20 Max

MA4E2502M

Medium

Barrier

DC - 18 GHz

470 Max

420 Typ

3 Min

5 Typ

0.12 Max

0.10 Typ

12 Typ

18 Max

MA4E2502H

High

Barrier

DC - 18 GHz

700 Max

650 Typ

3 Min

5 Typ

0.12 Max

0.10 Typ

11 Typ

15 Max